Enhanced Spin-Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Jingying Zhang,Zhiyao Jiang,Ziyang Li,Yiwen Song,Jiali Zhang,Qingyuan Jin,Yaowen Liu,Zongzhi Zhang

DOI: https://doi.org/10.1021/acsaelm.4c00521

IF: 4.494

2024-01-01

ACS Applied Electronic Materials

Abstract:In this study, significant modulations of perpendicular magnetic anisotropy, spin-orbit torque (SOT) efficiency (xi(SH)), and magnetic damping have been achieved in Pt/Co/Ta films after inserting an insulating NiO underlayer. As the NiO thickness (t(NiO)) varies from 0 to 2 nm, xi(SH) exhibits a nonmonotonic variation trend, initially increasing and then decreasing after reaching a maximum value at t(NiO) = 1 nm. The maximum SOT efficiency is as high as 0.60, nearly twice as large as that in the sample without NiO. Based on the NiO thickness dependencies of effective perpendicular anisotropy field and magnetic damping factor, we can conclude that the complex variation in xi(SH) is attributable to the combined effects of modified interfacial orbital hybridization and spin absorption by the NiO layer. Significantly, the latter is identified as the primary enhancement mechanism at t(NiO) < 1 nm, as it prevents spins with adverse polarization from reflecting back to the magnetic layer. Our findings demonstrate an alternative approach toward high SOT efficiency by engineering heterostructures with a magnetic insulator underlayer, which may play a powerful role in developing advanced energy-efficient spintronic devices.