Janus MoAZ 3 H (A=Ge, Si; Z=N, P, As) monolayers: a new type semiconductors exhibit excellent photovoltaic and catalytic performances
Xiao-Lin Cai,Guoxing Chen,Rui Li,Weiyang Yu,Xuefeng Yang,Yu Jia
DOI: https://doi.org/10.1039/d3cp02622a
IF: 3.3
2023-09-21
Physical Chemistry Chemical Physics
Abstract:Due to the asymmetrical structure in the vertical direction, Janus two-dimensional (2D) monolayer (ML) materials possess some unique physical properties, holding great promise in nanoscale devices. In this paper, based on the newly discovered MoA 2 Z 4 (A=Si, Ge; Z=N, P, As) ML, we propose a class of 2D Janus MoAZ 3 H ML materials with good stabilities and excellent mechanical properties using first-principles calculations. We demonstrate that the novel Janus MoAZ 3 H ML materials are all semiconductors with the bandgap ranging from 0.69 to 2.44 eV, giving rise to the good absorption in the visible light region. Especially, both MoSiN 3 H and MoGeN 3 H MLs can be used as the catalysts for producing hydrogen through water splitting. This catalytic property is much more efficient than MoA 2 Z 4 ML, attributed to the intrinsic electric field induced by the vertical asymmetry effectively separating electrons and holes. More importantly, the carrier mobility of MoAZ 3 H ML is up to 103 ~ 104 cm2V-1s-1 due to the large elastic modulus or small effective mass. Additionally, the electronic property of MoAZ 3 H ML can be easily tuned by strain. Our results suggest a new strategy for designing the novel 2D Janus materials, which not only expand the members in the 2D MA 2 Z 4 -based Janus family, but also provide candidates with excellent performances for photovoltaic and catalytic fields.
chemistry, physical,physics, atomic, molecular & chemical