Abstract:The RRAM-based computing-in-memory (CIM) using the voltage sensing mode (VSM) achieves a significant improvement in energy efficiency. However, the inconsistency of accumulated source-line conductance will affect the matrix-vector multiplication (MVM) precision. In this paper, we propose a redundant bit-line technique to compensate for the gain variation and input offset voltage for RRAM-based VSM CIM to achieve an accuracy of 96.39% (software accuracy 98.52%) on MNIST recognition, while reducing the error rate of CIM system by nearly 50%.

Compensation of Conductance Mismatch with Redundant Bit-lines for RRAM-based Voltage Sensing Mode Computing-in-Memory