Interface-induced Berry-curvature Dipole and Second-Order Nonlinear Hall Effect in Two-Dimensional Fe5GeTe2

Jinrui Zhong,Huimin Peng,Xiaocui Wang,Qi Feng,Yuqing Hu,Qiuli Li,Yongkai Li,Wei Jiang,Zhiwei Wang,Junxi Duan
DOI: https://doi.org/10.1103/physrevapplied.21.024044
IF: 4.6
2024-01-01
Physical Review Applied
Abstract:The second-order nonlinear Hall effect (NLHE), driven by the Berry-curvature dipole (BCD), quantum metrics, and disorder-related mechanisms, have potential in energy harvesting and signal doubling. However, for a large class of known materials, in which inversion symmetry is preserved, the BCD and NLHE are strictly zero. Here, we report that, by interface modulation through AlxO3-assisted exfoliation, a strong NLHE is generated in few-layer Fe5GeTe2, in which both the BCD and disorder-related contributions are in principle prohibited due to its R3 over bar m lattice symmetry. Scaling analysis indicates the existence of a large BCD reaching A approximate to 150 nm. The negative results from Fe5GeTe2 devices on SiO2 substrates confirm that the interface between Fe5GeTe2 and AlxO3 is responsible for the observed NLHE, revealing an interface-induced BCD, which has never been reported before. Our study provides a feasible way to generate NLHE in materials with inversion symmetry, expanding the material family for NLHE research and inspiring potential applications due to the advantages in mass production.
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