Abstract:The reduction of Ge vacancies is realized in GeTe thermoelectrics simply by annealing at temperatures below phase‐transition temperature, instead of counter‐doping and hetero‐alloying, leading to a record high‐carrier mobility and improved thermal stability. This work highlights the importance of understanding and regulating the intrinsic vacancy for developing high‐performance thermoelectrics. GeTe is a very promising thermoelectric material, but the presence of massive intrinsic Ge vacancies leads to an overhigh hole concentration and poor thermal stability. Counter doping is commonly employed to reduce the hole concentration, which, however, unavoidably deteriorates the carrier mobility. Here, it is found that the intrinsic hole concentration in the rhombohedral phase is much lower than that in the cubic phase, owing to the higher formation energy of Ge vacancy in the former. With this recognition, the hole concentration of GeTe can be tuned to its optimum value simply by annealing below the phase transition temperature. As a result, "compositional plainification" is realized in the high‐performance GeTe‐based thermoelectrics with significantly reduced amounts of counter dopants and hetero‐alloys. A high carrier mobility of 150 cm2 V−1 s−1 is realized in GeTe at 300 K, which is much higher than that in conventional counter‐doped ones (≤60 cm2 V−1 s−1). More importantly, GeTe‐based compounds, with suppressed intrinsic vacancies, exhibit good thermal stability and reproducibility of thermoelectric performance. A high peak figure of merit, zT, of 2.14 at 670 K is obtained in Ge0.93Bi0.03Pb0.04Te. This work highlights the importance of understanding and regulating the intrinsic vacancy for high‐performance GeTe thermoelectrics.

Efficient Rhombohedral GeTe Thermoelectrics for Low-Grade Heat Recovery

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Achieving High Carrier Mobility And Thermal Stability in Plainified Rhombohedral GeTe Thermoelectric Materials with zT > 2

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2 Te Nanocrystals and Resonant Level Doping

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Achieving High Thermoelectric Performance by NaSbTe 2 Alloying in GeTe for Simultaneous Suppression of Ge Vacancies and Band Tailoring

High thermoelectric performance in GeTe with compositional insensitivity

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Near-room-temperature rhombohedral Ge1-Pb Te thermoelectrics

Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics

Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

High‐Performance GeTe‐Based Thermoelectrics: from Materials to Devices

Thermoelectric Performance Optimization and Phase Transition of GeTe by Alloying with Orthorhombic CuSbSe 2

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Medium Entropy‐Enabled High Performance Cubic GeTe Thermoelectrics

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe