Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

Miniaturized and High Efficient GaN-based Blue Micro-Leds for Future Display Applications

Efficient Mini/Micro-Perovskite Light-Emitting Diodes

Recent Advances on GaN-Based Micro-LEDs

High Efficiency of 5 Μm-Diameter Blue Micro-Light-Emitting Diodes

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A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Ultra-small size (1-20 <bold>mu</bold>m) blue and green micro-LEDs fabricated by laser direct writing lithography

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

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Enhanced forward emission by backside mirror design in micron-sized LEDs

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

A red-emitting micrometer scale LED with external quantum efficiency >8%

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Excavating the Communication Performance in GaN-Based Green Micro-LEDs: Modular-Architectured p-Type Region