High-Performance Carbon Nanotube-Based Photodetectors Enhanced by SWCNTs/Graphene Heterojunction

Qing You,Yuning Li,Yang Zhang,Yuqiang Wang,Xue Li,Linan Li,Jingye Sun,Chang Gao,Tao Deng
DOI: https://doi.org/10.1109/jsen.2024.3361865
IF: 4.3
2024-01-01
IEEE Sensors Journal
Abstract:Photodetectors have attracted considerable attention for applications in optical telecommunications, imaging, and environmental monitoring. In this article, a broadband (visible to near infrared) photodetector based buried-gate field-effec transistor was fabricated with a high photoresponsivity of 1091 A/W (at 590 nm) and 314 A/W (at 940 nm) using transparent single-walled carbon nanotubes (SWCNTs) films at room temperature. On this basis, the photoresponsivity of photodetectors can be further improved to 2842 A/W (at 590 nm) and 1043 A/W (at 940 nm) by constructing SWCNTs/graphene heterojunction, which is nearly 3 times higher than that of SWCNTs photodetectors. The comparison of the optoelectrical performance of these two devices further confirms that forming the SWCNTs/graphene all-carbon heterojunction facilitates the separation and transport of photogenerated carriers, thereby providing a feasible pathway for high-performance, miniaturized, large-scale, and broadband photodetectors. This work brings insight into the development of all-carbon hybrid-based high-performance photodetectors in the future.
What problem does this paper attempt to address?