Completely Annealing-Free Flexible Perovskite Quantum Dot Solar Cells Employing UV-sintered Ga-doped SnO2 Electron Transport Layers

Wooyeon Kim,Jigeon Kim,Dayoung Kim,Bonkee Koo,Subin Yu,Yuelong Li,Younghoon Kim,Min Jae Ko
DOI: https://doi.org/10.1038/s41528-024-00305-3
IF: 14.6
2024-01-01
npj Flexible Electronics
Abstract:The electron transport layer (ETL) is a critical component in perovskite quantum dot (PQD) solar cells, significantly impacting their photovoltaic performance and stability. Low-temperature ETL deposition methods are especially desirable for fabricating flexible solar cells on polymer substrates. Herein, we propose a room-temperature-processed tin oxide (SnO2) ETL preparation method for flexible PQD solar cells. The process involves synthesizing highly crystalline SnO2 nanocrystals stabilized with organic ligands, spin-coating their dispersion, followed by UV irradiation. The energy level of SnO2 is controlled by doping gallium ions to reduce the energy level mismatch with the PQD. The proposed ETL-based CsPbI3-PQD solar cell achieves a power conversion efficiency (PCE) of 12.70%, the highest PCE among reported flexible quantum dot solar cells, maintaining 94% of the initial PCE after 500 bending tests. Consequently, we demonstrate that a systemically designed ETL enhances the photovoltaic performance and mechanical stability of flexible optoelectronic devices.
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