A Study of Strain and Electric Field Induced Photocatalytic Crossover in g-C3N4/CoN4 Nanocomposite through DFT : Upgradation from Type-I to Type-II Photocatalyst for Water Splitting Reaction

Mausumi Chattopadhyaya,Dhilshada. V. N,Sabyasachi Sen

DOI: https://doi.org/10.26434/chemrxiv-2024-c3tpf

2024-03-12

Abstract:Van der Waals (vdW) heterojunctions, consisting of two-dimensional monolayers, represent a recent category of materials characterized by their highly adjustable band alignment, bandgap energy, and bandgap transition characteristics. In this investigation, we employed density functional theory calculations to explore the formation of a vdW heterojunction involving heptazine-based graphitic carbon nitride (g-C3N4) monolayer and CoN4 (111) slab, denoted as g-C3N4/CoN4. This specific heterojunction holds promise as a potential catalyst for solar-driven photocatalysis in the water-splitting reaction. Upon the creation of the heterojunction, a type-I direct bandgap (Eg = 2.00 eV) is established, featuring appropriate conduction band minimum and valence band maximum levels in relation to the oxidation/reduction potentials for the water-splitting reaction. Moreover, the band alignment, bandgap energy, and transition type of the heterojunction can be tuned finely by applying external perpendicular electric fields (±0.5 V/Å) and biaxial strains of (±6 %). Notably, a -2% strain induces a type-II band alignment (Eg = 2.1 eV, direct), while an electric field of +0.5 V/Å also results in a type-II heterostructure (Eg = 1.90 eV, direct). The state-of-the-art DFT study reveals a photocatalytic crossover in g-C3N4/CoN4 from type-I to type-II in presence of bilateral strain and electric field.

Chemistry

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to study the effects of strain and applied electric field on the g - C3N4/CoN4 van der Waals heterojunction in the photocatalytic water - splitting reaction through density functional theory (DFT) calculations, especially the transition from Type - I to Type - II photocatalysts. Specifically, the research aims to:

1. **Improve photocatalytic performance**: By adjusting the band - gap energy level alignment of the g - C3N4/CoN4 heterojunction, improve its photocatalytic efficiency, especially for the water - splitting reaction. Although the Type - I heterojunction can be used as a photocatalyst, the effective separation of electron - hole pairs is limited, while the Type - II heterojunction can separate electrons and holes more effectively, thereby increasing the photocatalytic activity.

2. **Regulate the band gap and band alignment**: Use the applied electric field and biaxial strain to finely adjust the band - gap energy and band - alignment type of the heterojunction. Research shows that a - 2% compressive strain and an electric field of + 0.5 V/Å can transform the heterojunction from a Type - I direct band gap (Eg = 2.00 eV) to a Type - II direct band gap (Eg = 2.1 eV and 1.90 eV).

3. **Optimize light - absorption performance**: By adjusting the band gap and band alignment, improve the light - absorption ability of the heterojunction in the visible - light region, thereby enhancing its photocatalytic activity.

4. **Verify the theoretical model**: Through DFT calculations, verify the effects of strain and electric field on the electronic and optical properties of the g - C3N4/CoN4 heterojunction, providing a theoretical basis for experimental design.

### Formula summary

1. **Work function**:
\[
\phi = E_{\text{vacuum}} - E_{\text{Fermi}}
\]
where \( E_{\text{Fermi}} \) is the energy of the Fermi level and \( E_{\text{vacuum}} \) is the energy of the vacuum level.

2. **Optical absorption spectrum**:
\[
I(\omega) = \left[ \sqrt{2\omega} \sqrt{\epsilon_1^2(\omega) + \epsilon_2^2(\omega)} - \epsilon_1(\omega) \right]^{1/2}
\]
where \( \epsilon_1(\omega) \) is the real part of the dielectric function and \( \epsilon_2(\omega) \) is the imaginary part of the dielectric function.

3. **Optical band gap**:
\[
(\alpha h\nu)^m = A_0 (h\nu - E_{g,\text{opt}})
\]
where \( \alpha \) is the absorption coefficient, \( h\nu \) is the incident photon energy, \( E_{g,\text{opt}} \) is the optical band gap, and \( A_0 \) is a constant related to the transition probability.

4. **Relationship between wavelength and optical band gap**:
\[
\lambda = \frac{1240}{E_g}
\]
where \( \lambda \) is the wavelength of light (in nanometers) and \( E_g \) is the optical band gap (in electron volts).

5. **Surface energy**:
\[
\gamma = \frac{E_{\text{slab}} - E_{\text{bulk}}}{2A}
\]
where \( E_{\text{slab}} \) and \( E_{\text{bulk}} \) are the energies of the surface and the bulk phase respectively, and \( A \) is the surface area.

6. **Lattice mismatch degree**:
\[
\delta = \frac{a_{(111)} - a_{(g)}}{a_{(111)}}
\]
where \( a_{(111)} \) and \( a_{(g)} \) are the lattice parameters of CoN4 (111) and g - C3N4 monolayer respectively.

7. **Adhesion**