Abstract:The chemical interdiffusion of SiC and AIN is being investigated. For the initial run, a SiC-AIN diffusion couple was heated at 15000 C for 100 hours in a N2 environment. Scanning Auger spectroscopy was employed for the measurements of the diffusion lengths of the four elements. The diffusivity of the four elements was calculated to be -10.14 cm 2/hr, which is about four orders of magnitude lower than the previously reported results. A. Introduction Several attempts have been made to alloy SiC with other compounds to control the mechanical and physical properties. Single crystal growth of SiC-AIN mixtures by epitaxial techniques on the SiC platelets is one example [1]. There exists a difference in opinion among investigators about the possibility of forming solid solutions or new phases in the SiCAIN system at high temperatures [2]. The difficulties encountered in the attempts to obtain homogeneous SiC-AIN solid solutions are known to be related to the low diffusion coefficients. The diffusion coefficients of N in SiC have been determined to be =10-12 cm2 s at 25500 C [3]. In hot-pressed SiC-AIN samples and in SiC-AIN diffusion couples, approximate diffusion coefficients of SiC and AIN were calculated to be lx10-12 cm 2/s [4]. The corresponding activation energy was roughly estimated to be as high as 900 U mol, and the pre-exponential term was _10-8 cm 2/s which is an unusually high value. Thus, it was suggested that lattice diffusion of coupled SiC and AIN pairs was responsible for these high values. Phase transformations in the SiC-AIN system have also been studied. The 3C-.2H transformation was observed to proceed through a heavily faulted cubic structure which contained up to 4 % AIN [4]. In this investigation, the diffusion coefficient and the corresponding activation energy for the diffusion of the four elements Si, C, Al, and N in the interface layer between the single crystal SiC and sintered AIN materials will be determined. Although the diffusion coefficients for N in SiC at high temperature have been determined previously, the atomic behavior and phase formation at relatively low temperature for thin film deposition have not been yet clarified For this experiment, Auger spectroscopy and TEM will be employed to determine the nature and extent of the diffusion profiles and the existence (or lack of it) of additional phases in the solid solution region and at the interfaces between the solution and the end-member phases.

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