A Diaphragm Triaxial Force Sensor Using Soi Technology with High Sensitivity and Large Force Range

Cong Lin,Xincheng Zhu,Yi Liu,Jiahao Miao,Zhanxuan Zhou,Xueliang Wang,Xiaomei Yu
DOI: https://doi.org/10.1109/mems58180.2024.10439449
2024-01-01
Abstract:This paper reports a diaphragm triaxial force sensor fabricated on a SOI wafer with silicon piezoresistors as sensing elements. A 700 mu m x 700 mu m x 20 mu m sized photoresist was used as a force contact interface and DRIE technology was adopted to form a back cavity with a 30 mu m thick diaphragm. By optimizing the resistance and layout of the piezoresistors, a normal force of 720mV/N along Z-axis, a shear force of 259.8mV/N along X-axis, and a shear force of 285.6mV/N along Y-axis were obtained for the unpackaged sensor respectively. The minimum detectable force was calculated to be 2.8 mu N with a force range of 1.4N. By packaging this sensor with a designed resin structure, the force range is expanded to more than 40N, and the sensitivities of the three axes are still keep greater than 10mV/N.
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