Oxygen Vacancy and Double Carbon Modification of WO3 for Enhancing the Photoelectric Performance

Linhui Luo,Yun Lei,Can Li,Beibei Du,Yongqin Wang,Yifan Deng,Zehui Tang,Jiong Chen,Li Lin

DOI: https://doi.org/10.1016/j.mssp.2024.108204

IF: 4.1

2024-01-01

Materials Science in Semiconductor Processing

Abstract:WO3 and N-GQDs were loaded in a two-dimensional graphene sheet layer by hydrothermal method, and then oxygen vacancy-rich WO3/N-GQDs/N-rGO composites were successfully prepared by calcination. The structures, morphologies and surface chemical states were characterized by XRD, TEM, XPS, FTIR, and the electrochemical properties were studied by EIS, i -t, LSV and M -S. The WO3/N-GQDs/N-rGO composites had a high carrier density of 5.88 x 1020 cm-3 and presented an instantaneous photocurrent density of 2.96 x 10-4 A/cm2 under 365 nm irradiation, which was 4.4 times larger than that of pure WO3. The enhanced properties were mainly ascribed to the increased light absorption and carrier migration by the two-carbon modification of N-GQDs and N-rGO. Meanwhile, the presence of oxygen vacancies can improve the carrier lifetime, thus suppressing the recombination of photogenerated electron-hole pairs in the WO3/N-GQDs/N-rGO composites. The photoelectric properties of the composites were improved by the cooperative effect of double carbon modification and oxygen vacancies.