Selective Grafting of Phosphorus Onto Ti3C2Tx MXene Enables a Two-Proton Process and Enhanced Charge Storage

Hao Li,Ke Fan,Pei Xiong,Hanmo Zhou,Zezhou Lin,Keyu Tao,Tiancheng Liu,Xuyun Guo,Ye Zhu,Lyuchao Zhuang,Wei Han,Chen Yang,Yan Liu,Molly Meng-Jung Li,Mingwang Fu,John Wang,Haitao Huang
DOI: https://doi.org/10.1039/d3ta06032b
IF: 11.9
2024-01-01
Journal of Materials Chemistry A
Abstract:Ti3C2Tx MXene shows great promise as a supercapacitor electrode material owing to its high conductivity and pseudocapacitive nature. Phosphorus doping is an efficient strategy to boost its capacitance due to the synergistic effect of the P-O and P-C species formed. However, the contribution to enhanced capacitance from specific phosphorus doped species in P-doped Ti3C2Tx remains largely unexplored. Herein, phosphorus atoms are selectively grafted onto Ti3C2Tx MXene, introducing only P-O doped species and how this doping configuration contributes to capacitance is unraveled. The results show that 2.1 at% P-doped Ti3C2Tx delivers a capacitance enhancement of 35% (437 F g(-1) at 2 mV s(-1)) in comparison with pristine MXene and outstanding cycling stability. Multiple in situ and ex situ characterization studies along with DFT calculations collectively reveal that the formed P-O bonds are new active sites for a two-proton bonding-debonding process, leading to enhanced charge storage and capacitive performance in MXene. However, higher surface phosphorus doping would destroy crystal integrity of MXene and leads to performance deterioration.
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