Abstract:LaMnO(3) (LMO) films are deposited on SrTiO(3):Nb (0.8 wt%) substrates under various oxygen pressures to obtain different concentrations of oxygen vacancies in the films. The results of X-ray diffraction verify that with a decrease of the oxygen pressure, the c-axis lattice constant of the LMO films becomes larger, owing to an increase of the oxygen vacancies. Aberration-corrected annular-bright-field scanning transmission electron microscopy with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressure during fabrication. Correspondingly, the resistive switching property becomes more pronounced with more oxygen vacancies in the LMO films. Furthermore, a numerical model based on the modification of the interface property induced by the migration of oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. The calculated results are in good agreement with the experimental data, which reveal from a theoretical point of view that the migration of oxygen vacancies and the variation of the Schottky barrier at the interface with applied bias dominate the resistive switching characteristic. It is promising that the resistive switching property in perovskite oxides can be manipulated by controlling the oxygen vacancies during fabrication or later annealing in an oxygen atmosphere.

Evidence for Electric-Field-driven Migration and Diffusion of Oxygen Vacancies in Pr0.7Ca0.3MnO3

In Situ TEM Investigation of Oxygen Migration As a Key Mechanism for Resistive Switching in Pr0.7Ca0.3MnO3

In Situ TEM Studies of Oxygen Vacancy Migration for Electrically Induced Resistance Change Effect in Cerium Oxides.

Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories.

Electric-field Control of Phase Separation and Memory Effect in Pr0.6Ca0.4MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructures

Time-Resolved Optical Studies Of Spin And Quasiparticle Dynamics In Colossal Magnetoresistance Materials: La0.67ca0.33mno3, La0.67sr0.33mno3, And Sr2femoo6

Magnetic, Electrical Transport, and Thermoelectric Properties of Sr4ru3o10: Evidence for A Field-Induced Electronic Phase Transition at Low Temperatures

Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides

HE ELECTICAL-RANSPORT PROPERTIES OF THE MO-DOPING La0.7Ca0.2Ba0.1Mn1-xMoxO3

Effects of electric field and light on resistivity switching for Eu0.7Sr0.3MnO3 thin films

Nonvolatile Control of Transport and Magnetic Properties in Magnetoelectric Heterostructures by Electric Field

Magnetic Manipulation by Resistance Switching in CeO2/PrBa2Cu3O7−δ/Pt Heterostructure: the Role of Oxygen Vacancies

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Control of Charge Order Melting Through Local Memristive Migration of Oxygen Vacancies

In situ TEM Observation of Resistance Switching in Titanate Based Device

Field-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide films

Electric-Field Control of Oxygen Vacancies and Magnetic Phase Transition in a Cobaltite/Manganite Bilayer

Electroforming and Endurance Behavior of Al/Pr0.7ca0.3mno3/Pt Devices

Correlation Between Evolution of Resistive Switching and Oxygen Vacancy Configuration in La0.5ca0.5mno3 Based Memristive Devices

Electrical-field-induced Order Transitions in Sr-doped Manganite Perovskites

The abnormal photovoltaic effect in BiFeO 3 thin films modulated by bipolar domain orientations and oxygen-vacancy migration