Anomalous Semiconducting Behavior on VO2 under High Pressure

Xin Zhang,Junkai Zhang,Feng Ke,LI Guang-hui,Yiming Ma,Xizhe Liu,Cailong Liu,Yonghao Han,Yanwei Ma,Gao Chen
DOI: https://doi.org/10.1039/c5ra07732j
IF: 4.036
2015-01-01
RSC Advances
Abstract:The phase transition around 10.4 GPa is evidenced as a semiconductor-to-semiconductor transformation, and the abrupt increase of activation energy at 10.4 GPa indicates the increasingly insulating behavior of VO2 during the phase transition.
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