Abstract:We present first-principles total-energy electronic-structure calculations that provide the microscopic mechanism of Ag atom diffusion between the half unit cells (HUCs) on the Si(111)-(7×7) surface with and without the tip of the atomic force microscope (AFM). We find that, without the presence of the AFM tip, there are three pathways of inter-HUC diffusion. The pathway, in which the diffusing atom passes over the nanohole of the surface, has the lowest energy barrier. The diffusion along this pathway between the two HUCs is almost symmetric with the energy barrier of about 0.8 eV in both directions. In the other two pathways, the adatom diffuses along the edge of the nanohole. The diffusion along these two pathways have an energy barrier of about 1 eV. With the presence of the tip, we find that the reaction pathways are essentially the same, but the diffusion along the edge of the nanohole has a lower energy barrier than the diffusion over the nanohole. Thus the diffusion channel is changed by the presence of the tip. In the diffusion along the edge of the nanohole, the energy barrier in one direction is substantially reduced to be 0.2–0.4 eV by the tip, while that of the diffusion in the reverse direction remains larger than 1 eV. The Si tip reduces the energy barrier more than the Pt tip due to the flexibility of the tip apex structure. In addition to the reduction of the barrier, the tip traps the diffusing adatom preventing diffusion in the reverse direction. Also we find that the shape of the tip apex structure is important for the adatom's trapping ability. The bond formation between the AFM tip atom and the surface adatom is essential for atom manipulation using the AFM tip. Our results show that atom manipulation is possible with both the metallic and semiconducting AFM tips.

Indium Ad-Dimer Manipulation by an STM Tip

Modifying the STM Tip for the ' Ultimate ' Imaging of the Si(111)-7×7 Surface and Metal-supported Molecules

Manipulating a Co adatom on a stepped Cu surface by an STM tip: A theoretical study

Manipulating Magnetism and Conductance of an Adatom-Molecule Junction on a Metal Surface: an Ab Initio Study

ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111) 7×7 SURFACE

Creating and Probing Quantum Dot Molecules with the Scanning Tunneling Microscope

Scanning Tunnelling Spectroscopy and Manipulation of Double-Decker Phthalocyanine Molecules on a Semiconductor Surface

Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A

Force-Activated Isomerization of a Single Molecule

STM studies of initial In growth on Si(100)2 × 1: the In ad-dimer chain and its I-V characteristics

Constant di/dz Scanning Tunneling Microscopy: Atomic Precision Imaging and Hydrogen Depassivation Lithography on a Si(100) - 2 x 1 : H Surface

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Theory of single atom manipulation with a scanning probe tip: Force signatures, constant-height, and constant-force scans

Atomic force microscope manipulation of Ag atom on the Si(111) surface

Mechanical and Chemical Interactions in Atomically Defined Contacts

Regulating the Interactions of Adsorbates on Surfaces by Scanning Tunneling Microscopy Manipulation

Adsorption and Tunneling of Atomic Scale Lines of Indium and Lead on Si(100)

Multi-step atomic reaction enhanced by an atomic force microscope probe on Si(111) and Ge(111) surfaces

STM Single Atom Manipulation Technology and Its Physical Mechanism

Identifying tips for intramolecular NC-AFM imaging via in situ fingerprinting.

Manipulating Individual Dichlorotin Phthalocyanine Molecules on Cu(100) Surface at Room Temperature by Scanning Tunneling Microscopy