Growth, spectroscopy, and laser performance of a 2.79 μm Cr,Er,Pr:GYSGG radiation-resistant crystal.
Jianqiao Luo,Dunlu Sun,Huili Zhang,Qiang Guo,Zhongqing Fang,Xuyao Zhao,Maojie Cheng,Qingli Zhang,Shaotang Yin
DOI: https://doi.org/10.1364/OL.40.004194
IF: 3.6
2015-01-01
Optics Letters
Abstract:We demonstrate the growth, spectroscopy, and laser performance of a 2.79 mu m Cr,Er,Pr:GYSGG radiation-resistant crystal. The lifetimes for the upper laser level I-4(11/2) and lower laser level I-4(13/2) are 0.59 and 0.84 ms, respectively, which are due to the doping of the Pr3+ ions. A maximum pulse energy of 278 mJ operated at 10 Hz and 2.79 mu m is obtained when pumped with a flash lamp, which corresponds to the electrical-to-optical efficiency of 0.6% and a slope efficiency of 0.7%. A maximum average power of 2.9 W at 60 Hz is achieved, which corresponds to the electrical-to-optical efficiency of 0.4% and slope efficiency of 0.8%. Compared with a Cr,Er:YSGG crystal, the Cr,Er,Pr:GYSGG crystal can be operated at a higher pulse repetition rate. These results suggest that doping deactivator Pr3+ ions can effectively decrease the lower laser level lifetime and improve the laser repetition rate. Therefore, the application fields and range of the Cr,Er,Pr:GYSGG laser can be extended greatly due to its properties of radiation resistance and high repetition frequency. (C) 2015 Optical Society of America