Abstract:Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

Flexible Photodetectors on Plastic Substrates by Use of Printing Transferred Single-Crystal Germanium Membranes

Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors.

The Fabrication And Characterization Of Flexible Single-Crystalline Silicon And Germanium P-Intrinsic-N Photodetectors On Plastic Substrates

High-performance Flexible Waveguide-Integrated Photodetectors

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Wrinkled Single-Crystalline Germanium Nanomembranes for Stretchable Photodetectors

Thinning the Bulk into the Soft: Flexible and Stretchable Germanium Photodetectors

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

Flexible Organic-Inorganic Hybrid Photodetectors with N-Type Phenyl-C61-butyric Acid Methyl Ester (PCBM) and P-Type Pearl-Like GaP Nanowires

Flexible InGaAs Photodetector With High-Speed Detection and Long-Term Stability

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Printed Chalcogenide/Metal Heterostructured Photodetectors for Flexible Near‐Infrared Sensing

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Multi-inch single-crystalline perovskite membrane for high-detectivity flexible photosensors

High-Performance Flexible GaAs Nanofilm UV Photodetectors

Flexible Sandwich Photodetectors Based on Thick Polythiophene Films

Curved Photodetectors Based on Perovskite Microwire Arrays via In Situ Conformal Nanoimprinting