Tailoring epitaxial growth and magnetism in La1-xSrxMnO3 / SrTiO3 heterostructures via temperature-driven defect engineering

Alan Molinari,Saleh Gorji,Jan Michalička,Christian Kübel,Horst Hahn,Robert Kruk
DOI: https://doi.org/10.48550/arXiv.2201.05873
2022-01-15
Materials Science
Abstract:Among the class of strongly-correlated oxides, La1-xSrxMnO3 $-$ a half metallic ferromagnet with a Curie temperature above room temperature $-$ has sparked a huge interest as a functional building block for memory storage and spintronic applications. In this respect, defect engineering has been in the focus of a long-standing quest for fabricating LSMO thin films with highest quality in terms of both structural and magnetic properties. Here, we discuss the correlation between structural defects, such as oxygen vacancies and impurity islands, and magnetism in La0.74Sr0.26MnO3/SrTiO3 (LSMO/STO) epitaxial heterostructures by systematic control of the growth temperature and post-deposition annealing conditions. Upon increasing the growth temperature within the 500 $-$ 700 $^{\circ}$C range, the epitaxial LSMO films experience a progressive improvement in oxygen stoichiometry, leading to enhanced magnetic characteristics. Concurrently, however, the use of a high growth temperature triggers the diffusion of impurities from the bulk of STO, which cause the creation of off-stoichiometric, dendritic-like SrMoOx islands at the film/substrate interface. As a valuable workaround, post-deposition annealing of the LSMO films grown at a relatively-low temperature of about 500 $^{\circ}$C permits to obtain high-quality epitaxy, atomically-flat surface as well as a sharp magnetic transition above room temperature and robust ferromagnetism. Furthermore, under such optimized fabrication conditions possible scenarios for the formation of the magnetic dead layer as a function of LSMO film thickness are discussed. Our findings offer effective routes to finely tailor the complex interplay between structural and magnetic properties of LSMO thin films via temperature-controlled defect engineering.
What problem does this paper attempt to address?