Electronic Perturbation-Promoted Interfacial Pathway for Facile C–H Dissociation

Zhe Wang,Chunpeng Wang,Bing Lu,Zhirong Chen,Yong Wang,Shanjun Mao
DOI: https://doi.org/10.1016/s1872-2067(23)64575-9
2024-01-01
CHINESE JOURNAL OF CATALYSIS (CHINESE VERSION)
Abstract:Interface has often played significant role in the behavior of metal-based catalysts during various heterogeneous reactions. Herein, we reported a novel interfacial pathway for propane dehydrogenation on Pt-GaOx dual sites. The active ensemble, composing Pt particles and Ga2O3 clusters, facilitates the facile dissociation of C-H bonds (energy barrier < 0.30 eV) through H-abstraction by O sites, coupled with alkyl stabilization on the Pt surface. Notably, the electronic perturbation of the Pt slab induces higher-lying O 2p states at the interface, accompanied by a substantial density of states around fermi level. This is in stark contrast to the O species present in Ga2O3 crystals or clusters alone, leading to an exceptionally strong affinity for H and a robust ability for C-H scission. The Pt/Ga-Al2O3 catalysts prepared with Pt nanoparticles decorated by Ga oxide exhibit superior performance compared to Pt/Al2O3 and PtSn/Al2O3 catalysts. This insight into interfacial catalysis contributes to a broader understanding of the origin of the high catalytic efficiency observed in metal-based catalysts. (c) 2024, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
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