Abstract:800G Ethernet is expected to be the dominant solution for the next generation inter- and intra-data-center connections. To boost the transmission capacity to 800 Gbs, utilizing multi-level pulse amplitude modulation (PAM) transmitting format and adopting multiple lanes are competitive solutions. In this paper, we demonstrate a PAM4-modulated 800G QSFP-DD transceiver integrated with two 4 100G thin-film lithium niobate (TFLN) DR4 modulator chips. The DR4 modulator chips have a 13.5 dB insertion loss (including the inherent 3 dB modulation loss and 6 dB splitting loss) and one DR4 chip requires one 17 dBm light source. The EO response has a 40 GHz bandwidth at 2.3 dB and the electric reflection keeps below 12 dB. The eight channels of 800G transceiver have a clear open eye patterns at 1.5 Vpp driving voltage under 53.125 Gbaud PAM-4 modulation with all the ERs above 4.03 dB and TDECQ's below 2.13 dB. The sensitivity of the receiver is around 8.6 dBm after 2 km and back-to-back transmission with the BER of all the channels below the DR4 forward error correcting threshold. It is demonstrated that our 800G QSFP-DD transceiver meets 400GBASE-DR4 standards and packaging requirements simultaneously. This is the first time that 4 100G DR4 modulator array based on TFLN and 800G QSFP-DD transceiver based on TFLN are reported to the best of our knowledge.

Partial Response Signaling Enabled 320/150 GBd OOK/PAM4 Transmission Using a 65 GHz TFLN Modulator for Short-Reach Optical Interconnects

106.25 Gbaud 4-Level Pulse Amplitude Modulation Links Supporting (2x)100gigabit Ethernet on Single Lambda.

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Optical Amplification-Free 310/256 Gbaud OOK, 197/145 Gbaud PAM4, and 160/116 Gbaud PAM6 EML/DML-based Data Center Links.

Optical Amplification-Free High Baudrate Links for Intra-Data Center Communications

200 Gb/s Unamplified IM/DD Transmission over 20-km SMF with an O-band Low-Chirp Directly Modulated Laser

Optical-Amplification-Free 206/112 Gbaud OOK/PAM4 O-Band SiP RRM-Based Links

8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

Ultrahigh-Speed Optical Interconnects with Thin Film Lithium Niobate Modulator

Demonstration of 200 Gb/s/λ PON in O-band with High-Bandwidth TFLN Modulator

800 Gbit/s QSFP-DD Transceiver Based on Thin-film Lithium Niobate Photonic Integrated Circuit

190Gbaud OOK signal generation with a sub-sampling rate of 0.63 using silicon photonic dual-drive Mach–Zehnder modulator

Demonstration of C-band 112G PAM-4 Transmission over 80-Km Stand-Single Mode Fiber Based on Direct-Detection

High Spectral Efficiency 400 Gb/s Transmission by Different Modulation Formats and Advanced DSP

C-band 312gbps PAM8 Transmission over 30km SMF Using Integrated Optical Dispersion Compensator

Performance Enhancement of 112 Gb/s PAM-4 Amplifier-free 40km Transmission with Record Sensitivity Using O-band 25G-Class Directly Modulated Laser

PAM-4 Optical Transmission Beyond 224 Gbps Based on an Ultrahigh-Bandwidth Slow-Light Silicon Modulator

100 Gbit/s VSB-PAM-n IM/DD Transmission System Based on 10 GHz DML with Optical Filtering and Joint Nonlinear Equalization

260-GBaud Single-Wavelength Coherent Transmission Over 100-km SSMF Based on Novel Arbitrary Waveform Generator and Thin-Film Niobate I/Q Modulator

240 Gb/s Optical Transmission Based on an Ultrafast Silicon Microring Modulator