Flash-Based Solid-State Storage Reduces LDPC Read Retry Scheme.

Jinli Chen,Peixuan Li,Ping Xie
DOI: https://doi.org/10.1145/3627915.3628024
2023-01-01
Abstract:Flash memory, with its high performance and low power consumption, has been widely applied in various fields. The increasing storage density of flash memory has led to a gradual increase in Bit Error Rate (BER). Given the users' requirement for data accuracy, the reliability of flash memory has become a research focus. Currently, a common approach to achieve data error correction is by introducing error-correcting code modules. Among them, Low-Density Parity-Check (LDPC) codes are widely adopted due to their excellent error correction capability. However, using LDPC codes directly for error correction can introduce significant latency. To reduce the decoding latency of LDPC codes, this paper proposes a combined approach of refreshing and caching. Experimental results demonstrate that compared to the original approach, this scheme can achieve a maximum reduction of 28% in average response time and a maximum improvement of 63% in IOPS.
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