High Density Electron Doping in Boron-Doped Twisted Bilayer Graphene: a Ladder to Extended Flat-Band.

Khagesh Tanwar,Xi Wu,Xin Tan,Sean C. Smith,Jia Li,Ying (Ian) Chen

DOI: https://doi.org/10.1039/d3mh01213a

IF: 13.3

2024-01-01

Materials Horizons

Abstract:Realizing Von Hove singularity (VHS) and extended flat bands of graphene near the Fermi level ( E F ) to explore many-body interactions with a high tendency towards superconductivity.

What problem does this paper attempt to address?

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,Francisco Guinea,Jose Ángel Silva-Guillén,Shengjun Yuan

DOI: https://doi.org/10.1038/s41524-022-00763-1

IF: 12.256

2022-01-01

npj Computational Materials

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases. In this work, we study heterostructures of TBG and hexagonal boron nitride (hBN) using an atomistic tight-binding model together with semi-classical molecular dynamics to consider relaxation effects. The hBN substrate has significant effects on the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudo-magnetic fields that break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we develop a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics is a powerful tool to study the electronic properties of moiré heterostructures, and to explain experimental results in which the effect of the substrate plays an important role.
An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,F. Guinea,José Ángel Silva-Guillén,Shengjun Yuan

2021-01-01

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoir\'e systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.
Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Haohao Shi,Zhen Zhan,Zhikai Qi,Kaixiang Huang,Edo van Veen,Jose Ángel Silva-Guillén,Runxiao Zhang,Pengju Li,Kun Xie,Hengxing Ji,Mikhail I. Katsnelson,Shengjun Yuan,Shengyong Qin,Zhenyu Zhang

DOI: https://doi.org/10.1038/s41467-019-14207-w

IF: 16.6

2020-01-01

Nature Communications

Abstract:A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report a definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic fields can be fine-tuned by both the rotation angle and heterostrain. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.
Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Han Peng,Niels B. M. Schroter,Jianbo Yin,Huan Wang,Ting-Fung Chung,Haifeng Yang,Sandy Ekahana,Zhongkai Liu,Juan Jiang,Lexian Yang,Teng Zhang,Cheng Chen,Heng Ni,Alexey Barinov,Yong P. Chen,Zhongfan Liu,Hailin Peng,Yulin Chen

DOI: https://doi.org/10.1002/adma.201606741

2018-01-01

Abstract:Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.
Lithographic band structure engineering of graphene

Bjarke S. Jessen,Lene Gammelgaard,Morten R. Thomsen,David M. A. Mackenzie,Joachim D. Thomsen,José M. Caridad,Emil Duegaard,Kenji Watanabe,Takashi Taniguchi,Timothy J. Booth,Thomas G. Pedersen,Antti-Pekka Jauho,Peter Bøggild

DOI: https://doi.org/10.1038/s41565-019-0376-3

IF: 38.3

2019-02-18

Nature Nanotechnology

Abstract:Two-dimensional materials such as graphene allow direct access to the entirety of atoms constituting the crystal. While this makes shaping by lithography particularly attractive as a tool for band structure engineering through quantum confinement effects, edge disorder and contamination have so far limited progress towards experimental realization. Here, we define a superlattice in graphene encapsulated in hexagonal boron nitride, by etching an array of holes through the heterostructure with minimum feature sizes of 12–15 nm. We observe a magnetotransport regime that is distinctly different from the characteristic Landau fan of graphene, with a sizeable bandgap that can be tuned by a magnetic field. The measurements are accurately described by transport simulations and analytical calculations. Finally, we observe strong indications that the lithographically engineered band structure at the main Dirac point is cloned to a satellite peak that appears due to moiré interactions between the graphene and the encapsulating material.

materials science, multidisciplinary,nanoscience & nanotechnology
The Hofstadter Spectrum of Monolayer and Bilayer Graphene Van Der Waals Heterostructures with Boron Nitride

Xi Chen

2015-01-01

Abstract:In this thesis, we consider the electronic properties of materials created by stacking two-dimensional graphene layers. The first material is a heterostructure created by placing a graphene layer on top of a layer of hexagonal boron nitride. The energy bands are determined as well as the energy spectrum in the presence of a magnetic field applied in the direction perpendicular to the layers. There is a miniband structure that includes gaps and secondary Dirac points as well as a fractal structure of magnetic minibands known as Hofstadter's butterfly. The second material is multilayer graphene, which consists of a small number of graphene layers stacked on top of one another. We determine the effect on the low-energy electronic band structure by applying a magnetic field in the direction parallel to the layers, and find that the parallel field can induce a dramatic change in the band structure, which is known as a Lifshitz transition. Furthermore, depending on the magnitude and the direction of the field within the plane of the graphene layers, it is possible to access different phase regions of the band structure. We also model the electronic transport properties of multilayer graphene. We use both analytical mode-matching and the numerical recursive Green function methods to study the transport properties of electrons in multilayer graphene in the vicinity of zero energy, zero temperature and zero magnetic field.
Insight into Two-Dimensional Borophene: Five-Center Bond and Phonon-Mediated Superconductivity

Zhibin Gao,Mengyang Li,Jian-Sheng Wang

DOI: https://doi.org/10.1021/acsami.9b17896

2019-11-18

Abstract:We report a previously unknown monolayer borophene allotrope and we call it super-B with a flat structure based on the ab initio calculations. It has good thermal, dynamical, and mechanical stability compared with many other typical borophenes. We find that super-B has a fascinating chemical bond environment consisting of standard sp, sp2 hybridizations, and delocalized five-center three-electron $\pi$ bond, called $\pi$(5c-3e). This particular electronic structure plays a pivotal role in stabilizing the super-B chemically. By extra doping, super-B can be transformed into a Dirac material from pristine metal. Like graphene, it can also sustain tensile strain smaller than 24%, indicating superior flexibility. Moreover, due to the small atomic mass and large density of states at the Fermi level, super-B has the highest critical temperature Tc of 25.3 K in single-element superconductors at ambient conditions. We attribute this high Tc of super-B to the giant anharmonicity of two linear acoustic phonon branches and an unusually low optic phonon mode. These predictions provide new insight into the chemical nature of low dimensional boron nanostructures and highlight the potential applications of designing flexible devices and high Tc superconductors.

Materials Science,Mesoscale and Nanoscale Physics,Atomic and Molecular Clusters,Computational Physics
Tunable Multi-Bands in Twisted Double Bilayer Graphene

Yujian Zhu,Yiwei Chen,Qingxin Li,Yongdao Chen,Yan Huang,Wang Zhu,Dongdong An,Junwei Song,Qikang Gan,Kaiyuan Wang,Lingnan Wei,Qijun Zong,Kenji Watanabe,Takashi Taniguchi,Haolin Wang,Li Huang,Lede Xian,Liang Sun,Geliang Yu,Lei Wang

DOI: https://doi.org/10.1088/2053-1583/ac69bb

IF: 6.861

2022-01-01

2D Materials

Abstract:The bandstructure of a material, playing an important role in its electron transport property, is usually governed by the lattice configuration. Materials with a field-effect tunable band, such as bilayer [1] and rhombohedral trilayer graphene [2, 3], are more flexible for electronic applications. Here, on dual-gated twisted double bilayer graphene (TDBG) samples with small twist angle around 1(circle), we observe vertical electric-field-tunable bandstructures at multiple moire fillings with bandgap values continuously varying from zero to tens of mili-electron volts. Moreover, within the first moire filling on both electron and hole sides, the carrier transport deviates from Fermi liquid behavior, with measured resistivity exhibiting linear temperature dependence between 1.5 K and 50 K. Furthermore, under a vertical magnetic field, the coupling between the two bilayer graphene layers can also be turned on and off by a displacement field. Our results suggest TDBG with small twist angle is a platform for studying the evolution of multiple electric field tunable moire bands and the resulting emergent correlated electronic phases.
Bilayer Kagome Borophene with Multiple van Hove Singularities

Qian Gao,Qimin Yan,Zhenpeng Hu,Lan Chen

2023-10-08

Abstract:The appearance of van Hove singularities near the Fermi level leads to prominent phenomena, including superconductivity, charge density wave, and ferromagnetism. Here a bilayer Kagome lattice with multiple van Hove singularities is designed and a novel borophene with such lattice (BK-borophene) is proposed by the first-principles calculations. BK-borophene, which is formed via three-center two-electron (3c-2e) sigma-type bonds, is predicted to be energetically, dynamically, thermodynamically, and mechanically stable. The electronic structure hosts both conventional and high-order van Hove singularities in one band. The conventional van Hove singularity resulting from the horse saddle is 0.065 eV lower than the Fermi level, while the high-order one resulting from the monkey saddle is 0.385 eV below the Fermi level. Both the singularities lead to the divergence of electronic density of states. Besides, the high-order singularity is just intersected to a Dirac-like cone, where the Fermi velocity can reach 1340000 m/s. The interaction between the two Kagome lattices is critical for the appearance of high-order van Hove singularities. The novel bilayer Kagome borophene with rich and intriguing electronic structure offers an unprecedented platform for studying correlation phenomena in quantum material systems and beyond.

Materials Science
Evolution of Flat Band and Van Hove Singularities with Interlayer Coupling in Twisted Bilayer Graphene

Veerpal,B.R.K. Nanda,Ajay

2024-08-08

Abstract:Here we present a theoretical analysis (applicable to all twist angles of TBG) of band dispersion and density of states in TBG relating evolution of flat band and Van-Hove singularities with evolution of interlayer coupling in TBG. A simple tight binding Hamiltonian with environment dependent interlayer hopping and incorporated with internal configuration of carbon atoms inside a supercell is used to calculate band dispersion and density of states in TBG. Various Hamiltonian parameters and functional form of interlayer hopping applicable to a wide range of twist angles in TBG is estimated by fitting calculated dispersion and density of states with available experimentally observed dispersion and density of states in Graphene, AB-stacked bilayer graphene and some TBG systems. Computationally obtained band dispersion reveal that flat band in TBG occurs very close to Dirac point of graphene and only along linear dimension of two-dimensional wave vector space connecting two closest Dirac points of two graphene layers of TBG.

Mesoscale and Nanoscale Physics,Materials Science
Unconventional Superconductivity and Density Waves in Twisted Bilayer Graphene

Hiroki Isobe,Noah F. Q. Yuan,Liang Fu

DOI: https://doi.org/10.1103/PhysRevX.8.041041

2018-07-07

Abstract:We study electronic ordering instabilities of twisted bilayer graphene with $n=2$ electrons per supercell, where correlated insulator state and superconductivity are recently observed. Motivated by the Fermi surface nesting and the proximity to Van Hove singularity, we introduce a hot-spot model to study the effect of various electron interactions systematically. Using renormalization group method, we find $d$/$p$-wave superconductivity and charge/spin density wave emerge as the two types of leading instabilities driven by Coulomb repulsion. The density wave state has a gapped energy spectrum at $n=2$ and yields a single doubly-degenerate pocket upon doping to $n>2$. The intertwinement of density wave and superconductivity and the quasiparticle spectrum in the density wave state are consistent with experimental observations.

Strongly Correlated Electrons,Superconductivity
BN Doping in the Realm of Two-Dimensional Fullerene Network for Unparalleled Structural, Electronic, Optical, and HER Advancements: A Cutting-Edge DFT Investigation

Vivek Kumar Yadav

2023-08-15

Abstract:The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped two-dimensional (2D) materials offer improved stability and enhanced adsorption characteristics compared to pure graphene. Notably, It displays semiconducting behavior, resulting in higher conductivity and carrier mobility. In this study, we investigate the structural, electronic, optical, and conductivity/carrier transport properties of 2D polymer sheets made of fullerene, both with and without boron and nitrogen doping. We employ density functional theory (DFT) with PBE and HSE functionals, considering the inclusion of van der Waals (vdW) interactions. The research findings indicate that the 2D sheets of C60, C58B1N1, and C54B3N3 exhibit band gaps of approximately 0.97 eV (1.5 eV), 1.08 eV (1.9 eV), and 1.05 eV (1.6 eV), respectively, as obtained from PBE (HSE) calculations. Moreover, according to the deformation potential theory, both doped sheets exhibit ultra-high conductivity at elevated temperature). These results are highly promising and underscore the significance of a single pair of BN dopants in fullerene (C58B1N1) monolayers for the advancement of next-generation 2D nanoelectronic and photonics applications.

Materials Science
Topological flat bands, valley polarization, and interband superconductivity in magic-angle twisted bilayer graphene with proximitized spin-orbit couplings

Yang-Zhi Chou,Yuting Tan,Fengcheng Wu,Sankar Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.110.L041108

2024-07-11

Abstract:We study theoretically the magic-angle twisted bilayer graphene with proximity-induced Ising and Rashba spin-orbit couplings on the top layer. Topological flat bands (with three distinct phases) are generically realized by the spin-orbit couplings. Using a mean field analysis, we find that (partial) valley polarization prevails for a wide range of doping, suppressing the usual superconductivity with a pairing between time-reversal partners. Remarkably, we uncover that observable unconventional intervalley interband phonon-mediated superconductivity (with the highest $T_c\approx 1.2$K) can coexist with strong valley imbalance due to the approximate Fermi surface nesting between two flat bands not related by time-reversal symmetry, and the dominant pairing is an intersublattice Ising pairing, corresponding to a mixture of $p$- and $d$-waves. In contrast, the intrasublattice Ising phonon-mediated superconductivity with $s$- and $f$-wave mixing emerges in the absence of valley imbalance. Our work reveals an unprecedented route of realizing unconventional superconductivity.

Superconductivity,Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Yuan Cao,Valla Fatemi,Ahmet Demir,Shiang Fang,Spencer L. Tomarken,Jason Y. Luo,J. D. Sanchez-Yamagishi,K. Watanabe,T. Taniguchi,E. Kaxiras,R. C. Ashoori,P. Jarillo-Herrero

DOI: https://doi.org/10.1038/nature26154

2018-02-02

Abstract:Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW heterostructure and does not have a direct analog in other systems such as MBE-grown semiconductor heterostructures. For small twist angles, the moiré pattern produced by the lattice misorientation creates a long-range modulation. So far, the study of the effect of twist angles in vdW heterostructures has been mostly concentrated in graphene/hexagonal boron nitride (h-BN) twisted structures, which exhibit relatively weak interlayer interaction due to the presence of a large bandgap in h-BN. Here we show that when two graphene sheets are twisted by an angle close to the theoretically predicted 'magic angle', the resulting flat band structure near charge neutrality gives rise to a strongly-correlated electronic system. These flat bands exhibit half-filling insulating phases at zero magnetic field, which we show to be a Mott-like insulator arising from electrons localized in the moiré superlattice. These unique properties of magic-angle twisted bilayer graphene (TwBLG) open up a new playground for exotic many-body quantum phases in a 2D platform made of pure carbon and without magnetic field. The easy accessibility of the flat bands, the electrical tunability, and the bandwidth tunability though twist angle may pave the way towards more exotic correlated systems, such as unconventional superconductors or quantum spin liquids.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice

Wei Yang,Xiaobo Lu,Guorui Chen,Shuang Wu,Guibai Xie,Meng Cheng,Duoming Wang,Rong Yang,Dongxia Shi,Kenji Watanabe,Takashi Taniguchi,Christophe Voisin,Bernard Placais,Yuanbo Zhang,Guangyu Zhang

DOI: https://doi.org/10.1021/acs.nanolett.5b05161

IF: 10.8

2016-01-01

Nano Letters

Abstract:Graphene placed on hexagonal boron nitride (hBN) has received a wide range of interest due to the improved electrical performance and rich physics from the interface, especially the emergence of superlattice Dirac points as well as Hofstadter butterfly in high magnetic field. Instead of transferring graphene onto h-BN, epitaxial growth of graphene directly on a single-crystal h-BN provides an alternative and promising way to study these interesting superlattice effects due to their precise lattice alignment. Here we report an electrical transport study on epitaxial graphene superlattice on h-BN with a period of similar to 15.6 nm. The epitaxial graphene superlattice is clean, intrinsic, and of high quality with a carrier mobility of similar to 27 000 cm(2)V(-1) s(-1), which enables the observation of Hofstadter butterfly features originated from the superlattice at a magnetic field as low as 6.4 T. A metal-insulator transition and magnetic field dependent Fermi velocity were also observed, suggesting prominent electron-electron interaction-induced many-body effects.
Dirac Nodal Lines and Tilted Semi-Dirac Cones Coexisting in a Striped Boron Sheet

Honghong Zhang,Yuee Xie,Zhongwei Zhang,Chengyong Zhong,Yafei Li,Zhongfang Chen,Yuanping Chen

DOI: https://doi.org/10.48550/arXiv.1612.08455

2016-12-27

Abstract:The enchanting Dirac fermions in graphene stimulated us to seek for other two-dimensional (2D) Dirac materials, and boron monolayers may be a good candidate. So far, a number of monolayer boron sheets have been theoretically predicted, and three have been experimentally prepared. However, none of them possesses Dirac electrons. Herein, by means of density functional theory (DFT) computations, we identified a new boron monolayer, namely hr-sB, with two types of Dirac fermions coexisting in the sheet: one type is related to Dirac nodal lines traversing Brillouin zone (BZ) with velocities approaching 106 m/s, the other is related to tilted semi-Dirac cones with strong anisotropy. This newly predicted boron monolayer consists of hexagon and rhombus stripes. With an exceptional stability comparable to the experimentally achieved boron sheets, it is rather optimistic to grow hr-sB on some suitable substrates such as the Ag (111) surface. The unique electronic properties induced by special bond characteristics also imply that this boron monolayer may be a good superconductor.

Mesoscale and Nanoscale Physics,Chemical Physics,Computational Physics
Electron Interactions in Strain-Induced Zero-Energy Flat Band in Twisted Bilayer Graphene Near the Magic Angle

Yu Zhang,Zhe Hou,Yaxin Zhao,Zihan Guo,Yiwen Liu,Siyu Li,Ya-Ning Ren,Qing-Feng Sun,Lin He

DOI: https://doi.org/10.48550/arxiv.2002.10073

2020-01-01

Abstract:In the vicinity of the magic angle in twisted bilayer graphene (TBG), the two low-energy van Hove singularities (VHSs) become exceedingly narrow1-10 and many exotic correlated states, such as superconductivity, ferromagnetism, and topological phases, are observed11-16. Heterostrain, which is almost unavoidable in the TBG, can modify its single-particle band structure and lead to novel properties of the TBG that have never been considered so far. Here, we show that heterostrain in a TBG near the magic angle generates a new zero-energy flat band between the two VHSs. Doping the TBG to partially fill the zero-energy flat band, we observe a correlation-induced gap of about 10 meV that splits the flat band. By applying perpendicular magnetic fields, a large and linear response of the gap to magnetic fields is observed, attributing to the emergence of large orbital magnetic moments in the TBG when valley degeneracy of the flat band is lifted by electron-electron interactions. The orbital magnetic moment per moire supercell is measured as about 15 uB in the TBG.
Topological and stacked flat bands in bilayer graphene with a superlattice potential

Sayed Ali Akbar Ghorashi,Aaron Dunbrack,Ahmed Abouelkomsan,Jiacheng Sun,Xu Du,Jennifer Cano

DOI: https://doi.org/10.1103/PhysRevLett.130.196201

2023-06-14

Abstract:We show that bilayer graphene in the presence of a 2D superlattice potential provides a highly tunable setup that can realize a variety of flat band phenomena. We focus on two regimes: (i) topological flat bands with non-zero Chern numbers, C, including bands with higher Chern numbers |C| > 1; and (ii) an unprecedented phase consisting of a stack of nearly perfect flat bands with C = 0. For realistic values of the potential and superlattice periodicity, this stack can span nearly 100 meV, encompassing nearly all of the low-energy spectrum. We further show that in the topological regime, the topological flat band has a favorable band geometry for realizing a fractional Chern insulator (FCI) and use exact diagonalization to show that the FCI is in fact the ground state at 1/3 filling. Our results provide a realistic guide for future experiments to realize a new platform for flat band phenomena.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons
Direct observation of the band structure in bulk hexagonal boron nitride

Hugo Henck,Debora Pierucci,Giorgia Fugallo,José Avila,Guillaume Cassabois,Yannick J. Dappe,Mathieu G. Silly,Chaoyu Chen,Bernard Gil,Matteo Gatti,Francesco Sottile,Fausto Sirotti,Maria C. Asensio,Abdelkarim Ouerghi

DOI: https://doi.org/10.1103/physrevb.95.085410

IF: 3.7

2017-02-08

Physical Review B

Abstract:A promising route towards nanodevice applications relies on the association of graphene and transition metal dichalcogenides with hexagonal boron nitride (h-BN). Due to its insulating nature, h-BN has emerged as a natural substrate and gate dielectric for graphene-based electronic devices. However, some fundamental properties of bulk h-BN remain obscure. For example, the band structure and the position of the Fermi level have not been experimentally resolved. Here, we report a direct observation of parabolic dispersions of h-BN crystals using high-resolution angle-resolved photoemission spectroscopy (ARPES). We find that h-BN exfoliation on epitaxial graphene enables overcoming the technical difficulties of using ARPES with insulating materials. We show trigonal warping of the intensity maps at constant energy. The valence-band maxima are located around the K points, 2.5 eV below the Fermi level, thus confirming the residual p-type character of typical h-BN.

physics, condensed matter, applied,materials science, multidisciplinary
Giant Magnetic Anisotropy and Robust Quantum Anomalous Hall Effect in Boron-Doped Graphene with Re-adsorption.

Kai-Cheng Zhang,Yong-Feng Li,Yong Liu,Yan Zhu

DOI: https://doi.org/10.1088/1361-648x/aab111

2018-01-01

Journal of Physics Condensed Matter

Abstract:Recently topological materials have attracted much attention due to their quantization transports as well as edge states. It will be excellent to realize the robust quantum anomalous Hall transports in graphene-based devices. Using density-functional theory and tight-binding method, we investigated the structural, magnetic and topological properties for the boron-doped graphene with Re-adsorption. A large band-gap of 32.5 meV is opened by the Rashba spin-orbital coupling, and the band-gap is robust against the shape deformation of ±4% along the zigzag direction. Giant magnetic anisotropy emerges in this adsorption system together with the Fermi level lying in the band gap. Both the magnetic anisotropy and the band gap can be tuned by a moderate electric field. Calculations reveal that the system exhibits the quantization transports with the Chern number C=2.

High Density Electron Doping in Boron-Doped Twisted Bilayer Graphene: a Ladder to Extended Flat-Band.

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Lithographic band structure engineering of graphene

The Hofstadter Spectrum of Monolayer and Bilayer Graphene Van Der Waals Heterostructures with Boron Nitride

Insight into Two-Dimensional Borophene: Five-Center Bond and Phonon-Mediated Superconductivity

Tunable Multi-Bands in Twisted Double Bilayer Graphene

Bilayer Kagome Borophene with Multiple van Hove Singularities

Evolution of Flat Band and Van Hove Singularities with Interlayer Coupling in Twisted Bilayer Graphene

Unconventional Superconductivity and Density Waves in Twisted Bilayer Graphene

BN Doping in the Realm of Two-Dimensional Fullerene Network for Unparalleled Structural, Electronic, Optical, and HER Advancements: A Cutting-Edge DFT Investigation

Topological flat bands, valley polarization, and interband superconductivity in magic-angle twisted bilayer graphene with proximitized spin-orbit couplings

Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice

Dirac Nodal Lines and Tilted Semi-Dirac Cones Coexisting in a Striped Boron Sheet

Electron Interactions in Strain-Induced Zero-Energy Flat Band in Twisted Bilayer Graphene Near the Magic Angle

Topological and stacked flat bands in bilayer graphene with a superlattice potential

Direct observation of the band structure in bulk hexagonal boron nitride

Giant Magnetic Anisotropy and Robust Quantum Anomalous Hall Effect in Boron-Doped Graphene with Re-adsorption.