Abstract:Frontier research in neuroscience places a high demand for high-density, implantable, wireless Brain-Machine Interfaces (BMIs) consisting of more than 1,000 recording channels with a sampling rate up to 20 to 30kS/s per channel to acquire the precise activity of a single neuron. A wireless data link with Gb/s throughput is strongly required. In addition to the data-rate, the wireless telemetry module faces a strictly limited power budget of only a few milliwatts, to avoid tissue heating. Thirdly, a compact implant design with as few as possible off-chip components is expected to minimize the harm caused by the implant. Impulse-radio Ultra-WideBand (IR-UWB) enables Gb/s throughput with low power consumption and high integrability, due to its large available bandwidth and circuit optimization. One of the major design challenges of IR-UWB is that the transmit power density is limited to -41.3dBm/MHz to comply with the FCC spectral mask, while the energy per TX pulse needs to be high enough to ensure the transcutaneous data transmission. To alleviate this contradiction, modulation schemes with higher modulation order have been proposed [1–3]. [2] proposed Extended Multi-Pulse-Position Modulation (E-MPPM), achieving a modulation order of 3. However, the sync pulse in E-MPPM reduced the modulation order by 1/3. [3] improved the modulation order to 7 by introducing a 4PAM-8PSK-4PPM hybrid modulation, but it requires an initiative reduction of the TX pulse amplitude due to the use of PAM, resulting in a reduction of the transmission range. In addition, the 8PSK modulation used in [3] requires a high frequency 8-phase carrier with a power-hungry upconversion architecture. On the other hand, an all-digital transmitter with edge-combine technique features higher power efficiency [1], [2], [4], but the modulation order is limited to 1 to 3 due to the lack of phase modulation.

A 1.8gb/s, 2.3pj/bit, Crystal-Less IR-UWB Transmitter for Neural Implants

A 1.8Gb/s, 2.3pJ/bit, Crystal-Less IR-UWB Transmitter for Neural Implants.

Design of a Low-Power, High-Data-Rate, and Crystal-Less All-Digital IR-UWB Transmitter for High-Density Neural Implants

31.4 A 128-Channel 2mmx2mm Battery-Free Neural Dielet Merging Simultaneous Multi-Channel Transmission Through Multi-Carrier Orthogonal Backscatter

Challenges and Perspectives on Impulse Radio-Ultra-Wideband Transceivers for Neural Recording Applications

78.8 pJ/b, 100 Mb/s Noncoherent IR-UWB Receiver for Multichannel Neurorecording Implants

0.4 THz Photonic-Wireless Link with 106 Gb/s Single Channel Bitrate

A 49.8mm2 Fully Integrated, 1.5m Transmission-Range, High-Data-Rate IR-UWB Transmitter for Brain Implants

A 6-9 GHz 1.28 Gbps 76 mW Amplitude and Synchronized Time Shift Keying IR-UWB CMOS Transceiver for Brain Computer Interfaces

Low Power 3.1–10.6 GHz IR-UWB Transmitter for Gbps Wireless Communications

9.3 A 1mw 1mb/s 7.75-to-8.25ghz Chirp-Uwb Transceiver with Low Peak-Power Transmission and Fast Synchronization Capability.

A 200-Mb/s Energy Efficient Transcranial Transmitter Using Inductive Coupling

An Ultra-Wideband-Inspired System-on-Chip for an Optical Bidirectional Transcutaneous Biotelemetry

9.2 A 13.3mW 500Mb/s IR-UWB transceiver with link-margin enhancement technique for meter-range communications

A Single-Chip Full-Duplex High Speed Transceiver for Multi-Site Stimulating and Recording Neural Implants

0.15-Nj/b 3–5-Ghz IR-UWB System with Spectrum Tunable Transmitter and Merged-Correlator Noncoherent Receiver

A Battery-Less Crystal-Less 49.8µw Neural-Recording Chip Featuring Two-Tone RF Power Harvesting.

A 90nm-CMOS, 500Mbps, fully-integrated IR-UWB transceiver using pulse injection-locking for receiver phase synchronization

A 3.1&Amp;#x2013;4.8-Ghz Delay-Line-based Frequency-Hopping IR-UWB Transmitter in 65-NM CMOS Technology

System and chip design for high-speed impulse radio UWB

A 21.3%-Efficiency Clipped-Sinusoid UWB Impulse Radio Transmitter with Simultaneous Inductive Powering and Data Receiving