A Theoretical Model Based on Domain Transition Structure for Transition Gmi Behavior in High Frequency

Yunfei Wang,Tangfeng Feng,Yun Long Li,D. P. Makhnovskiy,Tatiana Eggers,Manh‐Huong Phan,Faxiang Qin
DOI: https://doi.org/10.2139/ssrn.4462011
2023-01-01
Abstract:Existing theoretical models on the frequency dependence of the magnetoimpedance (MI) in ferromagnetic microwires can only describe the MI phenomenon at the limiting cases of the lower MHz (< several hundred MHz) or higher GHz (> several GHz) regions. At frequencies between these two regions, known as the transition region, the MI curves usually undergo complex transformations that have not yet been accurately tracked due to the lack of robust broadband measurements. In this study, our broadband measurement design allows us to reveal a relationship between the high frequency MI effect and the magnetic structure of Co-based microwires. A particular magnetic structure consisting of longitudinal domains in the inner core (IC), circular domains in the outer shell (OS) and a transition region (TR) is observed, which originates from compositional gradients and residual stresses during microwire fabrication process. This IC/TR/OS structure is manifested through the complex transformations in the MI behavior exhibiting a turning point at GHz frequencies before the characteristic double MI peak. Based on this, a multilayer planar model is developed, where a more realistic magnetic structure including the TR layer is considered. The model reproduces the main features of the MI curves and yields deeper insight into the high frequency MI phenomenon. Our results not only pave the way to optimizing sensing capabilities of Co-based ferromagnetic microwires but also show the possibility of using our high-frequency MI measurements to map their magnetic microstructures.
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