Study on Copper-Assisted Chemical Etching of Porous Si/Cu@C Anode Materials

Jiayun He,Wen Yang,Chenxin Jin,Yan Wan,Guojun Xu,Chunyi Wang,Lang Zhou,Zhihao Yue
DOI: https://doi.org/10.1016/j.ssi.2023.116352
IF: 3.699
2023-01-01
Solid State Ionics
Abstract:The volume expansion and low electronic conductivity of silicon anodes are the main problems needed to be solved. In this paper, submicron silicon particles are used as raw materials and a two-step copper-assisted chemical etching method is used to construct porous structures, and asphalt is used as carbon source to finally prepare carbon coated copper modified porous silicon (pSi/Cu@C) composite anode material. The pSi/Cu@C shows excellent electrochemical performance. After 200 cycles at the rate of 0.5C (1C = 4.2 A g-1), the discharge specific capacity still remains 820 mAh g-1, while raw silicon anode material (Si-raw) presents a low discharge specific capacity of 229 mAh g-1. In addition, pSi/Cu@C maintains 774 mAh g-1 at 2C, showing good rate performance. In this paper, the method is simple and low cost, which is an effective modification method for silicon anode materials.
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