Abstract:The recently discovered magnetic topological insulator of $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$, has been successfully used to explore emerging physical phenomena, such as the quantum anomalous Hall effect (QAHE) and axion insulator state. Based on first-principles calculations, we have systematically investigated the electronic, magnetic, and topological properties of layered $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$, where those materials host similar crystal structure as the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$. Our calculations first show that each bulk system with antiferromagnetic order can be converted into a three-dimensional topologically nontrivial insulator by applying appropriate pressure. Then, we find that ferromagnetic (FM) $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ is a type II Weyl semimetal with a single pair of Weyl points near Fermi level. Specifically, FM $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$ and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ can be readily converted into Weyl semimetals under pressure. Furthermore, we notice that QAHE can also be achieved in layered FM $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ and $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$. All those findings demonstrate that the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$-like materials of $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ are promising candidates to explore intriguing topological quantum states.

Electronic Structure and Topological Phases of the Magnetic Layered Materials MnBi2Te4, MnBi2Se4

Electronic structures and topological phases of magnetic layered materials MnBi2Te4, MnBi2Se4 and MnSb2Te4

Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb<sub>2</sub>Te<sub>4</sub>

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb 2 Te 4

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}.

Tunable Topological States in Layered Magnetic Materials of MnSb2Te4, MnBi2Se4 , And

Pressure-Tuned Intralayer Exchange in Superlattice-Like MnBi2Te4/(Bi2Te3)n Topological Insulators.

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states

Intralayer Ferromagnetism Between S=52 Ions in MnBi2Te4

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Coexisting Ferromagnetic-antiferromagnetic Phase and Manipulation in Magnetic Topological Insulator MnBi4Te7

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi 2 Te 4

Multiple Magnetic Topological Phases in Bulk van der Waals Crystal MnSb 4 Te 7

Intrinsic Topological Phases in Mn2Bi2Te5 Tuned by the Layer Magnetization

Crystal and magnetic structures of magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

Charge Carrier Mediation and Ferromagnetism Induced in MnBi6Te10 Magnetic Topological Insulators by Antimony Doping

Pressure-driven electronic and structural phase transition in intrinsic magnetic topological insulator MnSb2Te4