2D III‐Nitride Materials: Properties, Growth, and Applications
Jianwei Ben,Xinke Liu,Cong Wang,Yupeng Zhang,Zhiming Shi,Yuping Jia,Shanli Zhang,Han Zhang,Wenjie Yu,Dabing Li,Xiaojuan Sun
DOI: https://doi.org/10.1002/adma.202006761
IF: 29.4
2021-05-28
Advanced Materials
Abstract:<p>2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology