Abstract:Abstract Phosphors with an efficient yellow‐emitting color play a crucial role in phosphor‐converted white LEDs (pc‐WLEDs), but popular yellow phosphors such as YAG:Ce or Eu 2+ ‐doped (oxy)nitrides cannot smoothly meet this seemingly simple requirement due to their strong absorptions in the visible range. Herein, we report a novel yellow‐emitting LuVO 4 :Bi 3+ phosphor that can solve this shortcoming. The emission from LuVO 4 :Bi 3+ shows a peak at 576 nm with a quantum efficiency (QE) of up to 68 %, good resistance to thermal quenching ( T 50 % =573 K), and no severe thermal degradation after heating–cooling cycles upon UV excitation. The yellow emission, as verified by X‐ray photoelectron spectra (XPS), originates from the ( 3 P 0 , 3 P 1 )→ 1 S 0 transitions of Bi 3+ . Increasing the temperature from 10 to 300 K produces a temperature‐dependent energy‐transfer process between VO 4 3− groups and Bi 3+ , and further heating of the samples to 573 K intensifies the emission. However, it subsequently weakens, accompanied by blueshifts of the emission peaks. This abnormal anti‐thermal quenching can be ascribed to temperature‐dependent energy transfer from VO 4 3− groups to Bi 3+ , a population redistribution between the excited states of 3 P 0 and 3 P 1 upon thermal stimulation, and discharge of electrons trapped in defects with a trap depth of 359 K. Device fabrication with the as‐prepared phosphor LuVO 4 :Bi 3+ has proved that it can act as a good yellow phosphor for pc‐WLEDs.

Abnormal Anti-Quenching and Controllable Multi-Transitions of Bi<sup>3+</sup>Luminescence by Temperature in a Yellow-Emitting LuVO<sub>4</sub>:Bi<sup>3+</sup>Phosphor for UV-Converted White LEDs