Abstract:A novel chip to double‐ridge rectangular waveguide, with an ultrabroadband operation bandwidth exceeding three standard rectangular waveguide (WR) bands of WR15, WR12, and WR10 is demonstrated for the first time. The transition design can be implemented on substrates with a high dielectric constant, which makes it suitable for integration with monolithic microwave integrated circuits. A novel chip to double‐ridge rectangular waveguide transition, with an ultra‐broadband operation bandwidth exceeding three standard rectangular waveguide (WR) bands of WR15, WR12, and WR10 is demonstrated for the first time in this letter, to the best of authors' knowledge. This bandwidth is achieved by coupling the microstrip mode directly to the fundamental TE mode of the waveguide. A unique feature of this transition is that the transition design can be implemented on substrates with a high dielectric constant, which makes it suitable for integration with monolithic microwave integrated circuits (MMICs). A back‐to‐back transition is realized using a split‐block assembly and 254 μm thickness alumina substrate (εr=9.8 at 80 GHz). The latter acts as an MMIC substrate substitute, including a tapered microstrip and a 50 Ω coplanar waveguide pad for probe‐based measurement. Two novel mechanical assembly concepts, involving die‐attach‐foil and indium solder, are used to build two split‐block prototypes. The simulated and measured S‐parameters of the transition are demonstrated from 35 to 125 GHz.

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