Above 100% Efficiency Photocharge Generation in Monolayer Semiconductors by Singlet Fission Sensitization.

Lei Ye,Yujie Zhao,Rong Xu,Shuangshuang Li,Chunfeng Zhang,Hanying Li,Haiming Zhu
DOI: https://doi.org/10.1021/jacs.3c09119
IF: 15
2023-01-01
Journal of the American Chemical Society
Abstract:Sensitizing inorganic semiconductors using singlet fission (SF) materials, which produce two excitons from one absorbed photon, can potentially boost their light-to-electricity conversion efficiency. The SF sensitization is particularly exciting for two-dimensional (2D) layered semiconductors with atomically flat surface and high carrier mobility but limited light absorption. However, efficiently harnessing triplet excitons from SF by charge transfer at organic/inorganic interface has been challenging, and the intricate interplay among competing processes remains unresolved. Here, we investigate SF sensitization in high-quality organic/2D bilayer heterostructures featuring TIPS-Pc single crystals. Through transient magneto-optical spectroscopy, we demonstrate that despite an ultrafast SF process in sub-100 fs, a significant fraction of singlet excitons in TIPS-Pc dissociate at the interface before fission, while triplet excitons from SF undergo diffusion-limited charge transfer at the interface in ∼10 ps to ns. Remarkably, the photocharge generation efficiency reaches 126% in heterostructures with optimal thickness, resulting from the competitive interplay between singlet exciton fission, dissociation, and triplet exciton transport. This presents a promising strategy for advancing SF-enhanced 2D optoelectronics beyond the conventional limits.
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