Dropout neuronal unit with tunable probability based on NbO

Yongxin Wei,Qingxi Duan,Rui Yuan,Xiaobing Yan,Yuchao Yang
DOI: https://doi.org/10.1016/j.mee.2022.111778
IF: 2.3
2022-01-01
Microelectronic Engineering
Abstract:Recent years have witnessed dramatic upsurge of artificial intelligence and neural networks in various application areas. The classification accuracy of neural networks is closely related to the number of training samples, the complexity of the neural network structure, and the number of training epochs. To achieve high performance of the neural network, a large number of training samples are usually required. However, since the number of training samples available can be limited in many real scenes, significant overfitting issue commonly arises and seriously deteriorates the training performance of neural networks. Here, we show a dropout neuronal unit based on NbO x volatile memristor, which can enable dropout function in the neural network constructed. The proposed neural network with such dropout neuron is able to suppress the overfitting problem effectively in the training process, and the role of dropout probability is investigated based on MNIST and FashionMNIST datasets. The results clearly imply the high potential of the dropout neuronal unit in building highly efficient neuromorphic computing systems. Display Omitted • The overfitting phenomenon is a serious problem of neural networks. • Dropout techniques in software are often used to solve overfitting problems. • A dropout neuronal unit based on NbO x volatile memristor is presented. • Neural networks with such dropout neuron can suppress overfitting efficiently.
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