Highly enhanced performance for sensing by monolayer 1T’ WS
Weiqi Wang,Jiamu Cao,Jing Zhou,Junyu Chen,Junfeng Liu,Huichao Deng,Yufeng Zhang,Xiaowei Liu
DOI: https://doi.org/10.1016/j.mee.2020.111215
IF: 2.3
2020-01-01
Microelectronic Engineering
Abstract:Superior gas capture and detection performance play an important role in gas sensing materials. Effects of atomic vacancy defects on intrinsic properties of material are also not negligible. Here we firstly discuss gas adsorption behavior of defective 1T’ WS 2 monolayer. We take toxic NO 2 gas as an example to compare adsorption effects between defective and perfect 1T'WS 2 monolayer. First-principles study based on density functional theory(DFT) is carried out to act as the theoretical basis. These results demonstrate vacancy defects could enhance adsorption stability of 1T’ WS 2 monolayer, which provide lower adsorption energy, more charge transfer and more overlaps of density of states. Therefore, vacancy defects make 1T’ WS 2 monolayer possess more outstanding surface activity and adsorption performance. This can also offer theoretical support for the improvement of nanomaterials applied in those high performance gas sensing devices. Display Omitted • Gas absorbs on ML 1T’ WS 2 with vacancy and perfect counterpart, respectively. • Vacancy decreases negative adsorption energy and increases electronic transfer. • A viable reference for material improvement and manufacture of sensing devices.
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