Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Valley Polarization in Transition Metal Dichalcogenide Layered Semiconductors:Generation,relaxation,manipulation and Transport

Valleytronics in transition metal dichalcogenides materials

Valleytronic Properties and Devices Based on Two-Dimensional Atomic Layer Materials

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Valleytronics in two-dimensional magnetic materials

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides

Gate-field control of valley polarization in valleytronics

Progress on two-dimensional ferrovalley materials

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6

Phonon-Limited Valley Polarization in Transition-Metal Dichalcogenides.

Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Electrical Valley Excitation By Spin Injection In Monolayer Tmdc

Valley manipulation by external fields in two-dimensional materials and their hybrid systems

Spontaneous valley polarization in two-dimensional organometallic lattices

Valley polarization generated in 3-dimensional group-IV monochalcogenids

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach