An NMOS LDO with TM-MOS and Dynamic Clamp Technique Handling Up to Sub-10-μs Short-Period Load Transient

Xin Ming,Jian-Jun Kuang,Xin-Ce Gong,Jie Zhang,Zhuo Wang,Bo Zhang
DOI: https://doi.org/10.1109/jssc.2023.3305614
IF: 5.4
2024-01-01
IEEE Journal of Solid-State Circuits
Abstract:A current-efficient and fast-transient n-type lowdropout regulator (LDO) for high-frequency load transient in mobile phone applications is presented in this article. By using transconductance magnified MOS (TM-MOS), it reduces LDO's output impedance with fast response speed and keeps high current efficiency. Moreover, based on load-current sensing of TM-MOS, active clamp strategy is implemented to optimize the driving dead zone (DDZ) of this NMOS LDO and achieve good high-frequency load transient performance. Robust loop stability for a wide load-current range is ensured as well with the help of revised Type-II frequency compensation. This circuit has been implemented in a 0.35-mu m standard CMOS process and occupies an active chip area of 470 x 280 mu m(2). With a 1-mu F output cap and load steps between 0 A and 300 mA, experimental results show that it features 50/36 mV of undershoot/overshoot at low-frequency load transient and 68/36 mV of undershoot/overshoot at the high-frequency load transient (i.e., 10-mu s light-load duration). This regulator consumes 8.2-mu A quiescent current, achieving 99.68% equivalent current efficiency at 300-mA load current.
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