Giant enhancement of exciton diffusion near an electronic Mott insulator
Pranshoo Upadhyay,Daniel G. Suárez-Forero,Tsung-Sheng Huang,Mahmoud Jalali Mehrabad,Beini Gao,Supratik Sarkar,Deric Session,Kenji Watanabe,Takashi Taniguchi,You Zhou,Michael Knap,Mohammad Hafezi
2024-09-27
Abstract:Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges the comprehension of the mechanisms that determine physical properties such as mobility. In this study, we investigate interlayer exciton diffusion in an H-stacked WSe$_2$/WS$_2$ heterobilayer. Our measurements are performed in the dilute exciton density limit at low temperatures to examine how the presence of charges affects exciton mobility. Remarkably, for charge doping near the Mott insulator phase, we observe a giant enhancement of exciton diffusion of three orders of magnitude compared to charge neutrality. We attribute this observation to mobile valence holes, which experience a suppressed moiré potential due to the electronic charge order in the conduction band, and recombine with any conduction electron in a non-monogamous manner. This new mechanism emerges for sufficiently large fillings in the vicinity of correlated generalized Wigner crystal and Mott insulating states. Our results demonstrate the potential to characterize correlated electron states through exciton diffusion and provide insights into the rich interplay of bosons and fermions in semiconductor heterostructures.
Strongly Correlated Electrons,Mesoscale and Nanoscale Physics