Rectangular Cross-Sectional Nd3+/Yb3+ Co-Doped AlN Nanorods with Strong Up-Conversion Emission for High-Sensitivity Optical Thermometry

Jiaqi Wang,Xin Ding,Tongtong Gao,Huiling Zheng,Xuejiao Wang,Qiushi Wang,Cailong Liu
DOI: https://doi.org/10.1016/j.jallcom.2023.172637
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Due to the characteristics of non-contact, high sensitivity and spatial resolution, nanoscale optical thermometry is necessary in many applications such as micro/nano electronics, integrated optics and biomedicine. Herein, we report the synthesis of Nd3+/Yb3+ co-doped AlN (AlN:Nd3+/Yb3+) nanorods using an arc discharge method and investigate their phase, composition and morphology using XRD, Raman, XPS, EDS, ICP, SEM and TEM. The nanorods with rectangular cross-section are highly single crystalline and have a uniform smooth surface. Upon excitation at 980 nm, AlN:Nd3+/Yb3+ nanorods exhibit up-conversion (UC) visible emission bands (around 544, 595 and 667 nm) and near-infrared emission bands (around 755 and 806 nm), which correspond to intra-4f electron transitions of the Nd3+ ions. Later, the temperature dependence of UC luminescence behavior was systemically studied using luminescence intensity ratio (LIR) technique. It was verified that LIRs with nonthermally coupled levels ((4)G(7/2)/F-4(5/2) or (4)G(7/2)/F-4(7/2)) are suitable for temperature sensing. The maximum relative sensitivity based on (4)G(7/2)/F-4(7/2) is 4.63% K-1 at 298 K, which is one of the highest values reported for optical thermometers. This work provides an efficient method for synthesizing wide-band gap semiconductors with doped size-mismatched functional atoms that can be used for high-sensitivity optical thermometry.
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