Self-Biased Magnetoelectric Sensor Operating in <italic>d</italic><sub>36</sub> Face-Shear Mode

Jingen Wu,Yongjun Du,Yiwei Xu,Jiacheng Qiao,Yuhan Qu,Zhiguang Wang,Shuxiang Dong,Zhongqiang Hu,Ming Liu
DOI: https://doi.org/10.1109/JSEN.2023.3306350
IF: 4.3
2023-01-01
IEEE Sensors Journal
Abstract:A magnetoelectric (ME) sensor of face-shear type is demonstrated based on the ME composite consisting of (PbMg <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{33}}$ </tex-math></inline-formula> Nb{0}.{67}O{3}}{)}_{{1}-{x}-(PbTiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{3}}{)}_{x}$ </tex-math></inline-formula> piezoelectric single crystal (abbreviated as PMN-PT) and Metglas amorphous alloy. The face-shear strain is induced in PMN-PT via the magnetostriction of Metglas under a magnetic field, which generates an ME voltage through the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${d}_{{36}}$ </tex-math></inline-formula> piezoelectric coefficient. The proposed sensor reveals a high ME coupling coefficient of 48.8 V/cm Oe at resonant frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula> 107.5 kHz), which is self-biased with the capability to detect ac magnetic fields of 4.58 nT at 1 kHz and 10.43 pT at resonant frequency, respectively. The self-biased face-shear mode ME sensor exhibits great potential for weak magnetic field detection.
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