Abstract:The inverse spin Hall effect (ISHE), namely spin flows converted into charge currents due to spin orbital interaction, is investigated extensively in heavy metals, such as Pt, W, Au, etc. Recently, the effect was also found in Cu doped with Au. Their difference is that the spin Hall effect is from the intrinsic effect which is related to the topological character of the electronic bands, while the ISHE is mainly from the extrinsic spin dependent scattering by the impurities. The impurity scattering can give opportunities to tune the effect, for example by impurity concentration, which is impossible by the intrinsic mechanism. In this work, we extend the material to the doped oxides. NiFe films are deposited on undoped and doped SrTiO3 substrates by magnetron sputtering, respectively. The spins are injected from the magnetic thin films by spin pumping through using a shorted microstrip transmission line fixture at different frequencies and room temperature. The spin rectification voltage and the inverse spin Hall voltage in the doped sample are separated by the inverting spin injection direction method, which is realized by flipping the samples. The results show that in the undoped SrTiO3 substrate, the voltage curves before and after flipping the sample are basically the same, which is due to the voltage generated by the spin rectification effect of the NiFe film. For Nb-doped SrTiO3 substrates with Nb concentration x = 0.028, 0.05, 0.1, 0.15 and 0.2, the inverse spin Hall voltage decreases with doping concentration increasing and is not detectable in sample with doping concentration of 0.15, nor with doping concentration of 0.2. The decrease of the ISHE effect may be due to the spin coherent length decreasing with the increase of the impurity concentration. The correlation between spin-charge conversion and transportation needs knowing in detail. Nevertheless, the results show that by doping strong spin-orbit coupling impurities into SrTiO3, thus by changing the doping concentration, the inverse spin Hall effect in SrTiO3 can be controlled. This tunable spin-charge conversion provides more possibilities for developing the spintronic devices and it will have great potential applications in the future.

Dependence of the Inverse Spin Hall Effect in Sr(NbxTi1−x)O

Inverse Spin Hall Effect in Nb Doped SrTiO<sub>3</sub>

Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt

Self-induced inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ films

Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films

Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO2 Films

Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr2−x SmxIrO4system

Inverse orbital Hall effect and orbitronic terahertz emission observed in the materials with weak spin-orbit coupling

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO3 Films

Orbitronic Effect on the Magnetic Reconstruction of Monocell SrMnO3 on Ferroelectric BaTiO3 Substrate

Magnetic Anisotropy and Planar Topological Hall Effect in SrMn x Ir 1-x O 3 Films.

Modulated transport and magnetic behavior in antiferromagnetic NdNiO3/SrIrO3 bilayers

Effects of Sr-doping on the electronic and spin-state properties of infinite-layer nickelates

Orbital and Spin Character of Doped Carriers in Infinite-Layer Nickelates

Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) LaTiO_{3}/SrTiO_{3} Interface

Origin of the Anomalous Hall Effect in SrCoO3 Thin Films

Modulation of Spin–Orbit Torque from SrRuO3 by Epitaxial‐Strain‐Induced Octahedral Rotation

Exchange Interactions and Sensitivity of the Ni Two-Hole Spin State to Hund's Coupling in Doped NdNiO2

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO 3 Films

Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface