Understanding Charge Transport in All-Inorganic Halide Perovskite Nanocrystal Thin-Film Field Effect Transistors
Shu Zhou,Guodong Zhou,Yuhao Li,Xin Xu,Yao-Jane Hsu,Jianbin Xu,Ni Zhao,Xinhui Lu
DOI: https://doi.org/10.1021/acsenergylett.0c01295
IF: 22
2020-07-20
ACS Energy Letters
Abstract:Improving devices based on solution-processed halide perovskite nanocrystals (NCs) demands a deeper understanding of charge transport in this emerging new class of ionic semiconductor nanomaterials. In this work, we fabricate all-inorganic CsPbBr<sub>3</sub> NCs terminated with short ligands into field effect transistors, providing a facile platform to study the electronic–ionic transport systematically. By combining with transient response characterization, we demonstrate that electronic current is the dominant current passing through perovskite-NC films under dark conditions, while mobile ions induce intrinsic doping to perovskite NCs, which gradually changes the film conductivity and thereby the magnitude of the electronic current. The ion-induced doping prevails over the gating effect at room temperature, resulting in no gate modulation of the channel current in the transistor measurements. At <i>T</i> < 240 K, however, when ionic transport is suppressed, CsPbBr<sub>3</sub>-NC transistors exhibit a clean unipolar transport characteristic in a <i>p</i>-type mode featuring well-defined linear and saturation regimes. Extrinsically Bi<sup>3+</sup>- and Ag<sup>+</sup>-doped CsPbBr<sub>3</sub>-NC films further confirm the <i>p</i>-type transport property and dominant electrical gating effect at low temperature, which enables switching the device from normally off (<i>p</i>-type enhancement) to normally on (<i>p</i>-type depletion).The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsenergylett.0c01295?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsenergylett.0c01295</a>.Experimental methods; optical absorption, PL, GIXS, XPS, UPS, EDS, and SEM results of perovskite NCs; transient response and photoresponse characterization of perovskite NC films; biexponential fitting results of the transient response under different bias; FET characteristics (<a class="ext-link" href="/doi/suppl/10.1021/acsenergylett.0c01295/suppl_file/nz0c01295_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry