Abstract:Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.

Translational Boundaries As Incipient Ferrielectric Domains in Antiferroelectric PbZrO3

Translational Boundaries as Incipient Ferrielectric Domains in Antiferroelectric PbZrO_{3}

Atomic reconfiguration among tri-state transition at ferroelectric/antiferroelectric phase boundaries in Pb(Zr,Ti)O3

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials

Assessing the nature of nanoscale ferroelectric domain walls in lead titanate multilayers

Electric-field-induced Phase Transitions in Co-Doped Pb(Zr1−xTix)O3at the Morphotropic Phase Boundary

An Intriguing Intermediate State As a Bridge Between Antiferroelectric and Ferroelectric Perovskites

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO 3

Domain wall architecture in tetragonal ferroelectric thin films

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$

Giant Anhysteretic Response of Ferroelectric Solid Solutions with Morphotropic Boundaries: the Role of Polar Anisotropy

Unraveling Deterministic Mesoscopic Polarization Switching Mechanisms: Spatially Resolved Studies of a Tilt Grain Boundary in Bismuth Ferrite

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Ferroelectricity at the extreme thickness limit in the archetypal antiferroelectric PbZrO$_3$

Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

Revisiting Structural Evolution, Dielectric and Ferroelectric Properties in (pb Ba1-)ZrO3 System (0.5≤X≤1.0)

Lattice rotation vortex at the monoclinic ferroelectric domain boundary in relaxor ferroelectric crystal