Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system

Junjie An,Linfang Wang,Wang Ye,Weizeng Li,Hanghang Gao,Zhi Li,Zhidao Zhou,Jinghui Tian,Jianfeng Gao,Chunmeng Dou,Qi Liu
DOI: https://doi.org/10.1007/s11432-022-3627-8
2023-01-01
Science China Information Sciences
Abstract:Recent advances in developing beyond von Neumann architectures have moved the memristive devices to the forefront as one of the key enablers to realizing memristive computing-in-memory (mCIM) structures, which shows a great promise to boost the energy-efficiency and the performance of artificial intelligence (AI) chips. In this study, by considering the interactions between devices, circuits, and systems in the mCIM design, we propose several cross-layer design techniques, including (1) the BL-SL interactive forming protection (BSIFP) circuit that can reduce the voltage drop on the selected transistor, suppress the current overshoot by 65.96%, and improve the bit-cell density by more than 10.19%, (2) the clamping transistor trimming scheme (CTTS) to prevent the multiply-and-accumulate (MAC) signal margin degradation from chip-to-chip resistance variations, and (3) dynamic input-parallelism and output-precision (DIPOP) that can reduce the energy cost by 22.92% in a typical inference task with negligible accuracy loss. The results demonstrate the significant role of the cross-layer-interactive approach and provide a preliminary guideline for highly-efficient mCIM design.
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