Fabrication of Polycrystalline Diamond Films with Various Boron Doping Levels Deposited on WC–Co Electrode for Organic Pollutants Oxidation

Tao Zhang,Zhe Xue,Zejun Wang,Guodong Huang,Guangpan Peng
DOI: https://doi.org/10.1007/s10800-023-01961-5
IF: 2.925
2023-01-01
Journal of Applied Electrochemistry
Abstract:Cemented carbide (WC–Co), which has a low coefficient of thermal expansion, is employed as a substrate rather than the more typical Si, Ti, and Nb ones. BDD films are deposited on this substrate using hot filament chemical vapor deposition with various [B]/[C]gas ratios. Physical and electrochemical characteristics of the WC–Co/BDD electrodes are investigated by field emission scanning electron microscopy, Micro-Raman spectroscopy, and cyclic voltammetric. The addition of boron atoms is found to reduce the grain size and sp3(diamond)/sp2 (graphite) ratio in the films. Also, heavy boron doping is likely to cause substantial residual stress in the films. The electrodes with the various doping levels exhibit a wide potential window greater than 3.5 V and featureless background current in 0.5 mol L−1 of H2SO4 solution. Only the highly doped electrodes showed quasi-reversible behavior in the K3[Fe (CN)6] redox system. These electrochemical performances of BDD films on the WC–Co substrate are similar to or even slightly better than that on the commonly used substrates. Subsequently, the electrode with the preferred [B]/[C]gas ratio (5000 ppm) is characterized by repeated oxidizing phenol studies and accelerated life tests (ALT). Remarkably, with an excellent current efficiency of 94
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