All solution-processed SnO 2 /1D-CsAg 2 I 3 heterojunction for high-sensitivity self-powered visible-blind UV photodetector

Zhaosheng Hu,Boyao Zhang,Feijuan Zhang,Xing Guo,Zhenhua Lin,Jincheng Zhang,Yue Hao,Jingjing Chang
DOI: https://doi.org/10.1007/s40843-023-2487-3
2023-01-01
Science China Materials
Abstract:Low-dimensional lead-free metal halides have shown considerable potential for visible-blind ultraviolet (UV) photodetectors (PDs) owing to their extraordinary optoelectronic properties. Herein, a high-quality perovskite-like CsAg 2 I 3 thin film was successfully fabricated via the pyridine additive-assisted one-step solution method, and it exhibited an intrinsic p-type behavior and possessed a low exciton binding energy of 202 meV, which was even comparable to low-dimensional lead halide perovskite counterpart and thus favored the separation of photogenerated carriers. Additionally, a type-II n-p heterojunction of SnO 2 /CsAg 2 I 3 for a self-powered UV PD was configured and investigated experimentally and theoretically. A 4.13-eV-wide-bandgap SnO 2 with an extremely low Urbach energy of 0.214 eV was obtained to suppress the persistent photoconductivity effect. The resulting device exhibited pronounced sensitivity with an ultrafast response time of 47/74 µs, which is outstanding among visible-blind UV PDs and two orders of magnitude lower than previously reported CsAg 2 I 3 -based UV PDs. The responsivity and detectivity were as high as 0.032 AW −1 and 1.2 × 10 11 Jones, respectively. Furthermore, the highly transparent (> 90%) heterojunction for visible light illustrated the superior visible-blind characteristics. The remarkable device performance, solution-processability, and long-term stability reveal a promising strategy for the design of commercial UV PDs that are visible-blind, self-powered, stable, and nontoxic.
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