Abstract:The electric gating on the transport properties of two-dimensional electron gas (2DEG) at the interface of LaAlO3/SrTiO3 (LAO/STO) heterostructure has attracted great research interest due to its potential application in field-effect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices (SLs) fabricated on the TiO2-terminated (001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.

A comparative study of superconductivity at LaAlO<sub>3</sub>/SrTiO<sub>3</sub> and BaTiO<sub>3</sub>/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterointerfaces

Two-Dimensional Superconductivity at the LaAlO_{3}/KTaO_{3}(110) Heterointerface.

Electric Field Control Of Superconductivity At The Laalo3/Ktao3(111) Interface

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures.

Superconductivity in Epitaxially Grown LaVO3/KTaO3(111) Heterostructures

Superconductivity and Frozen Electronic States at the (111) LaAlO$_3$/SrTiO$_3$ Interface

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces

Orientation-dependent electron-phonon coupling in interfacial superconductors LaAlO3/KTaO3

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Effects of Growth Temperature, Oxygen Pressure, Laser Fluence and Postannealing on Transport Properties of Superconducting LaAlO3/KTaO3(111) Interfaces

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

Titanium D Xy Ferromagnetism at the LaAlO 3 / SrTiO 3 Interface

Absence of Localized 5d1 Electrons in KTaO3 Interface Superconductors

Electric gating of the multichannel conduction in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> superlattices*

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Electric Gating of the Multichannel Conduction in LaAlO3/SrTiO3 Superlattices*

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness