Illuminating the Photomechanical Effect: Exploring the Relationship Between Electron-Hole Excitation and Deformation Mechanisms in Nanotwinned Boron Carbide

Yi He,Yidi Shen,Bin Tang,Qi An
DOI: https://doi.org/10.1103/physrevb.107.224102
IF: 3.7
2023-01-01
Physical Review B
Abstract:The photomechanical effect, a phenomenon in which electron-hole (e-h) excitation from light illumination influences the plastic deformation of semiconductors, remains poorly understood at the microscopic level. In this study, we employ constrained density-functional theory simulations to investigate the interaction between e-h excitation and twin boundaries in nanotwinned boron carbide (B4C) and their impact on deformation mechanisms. Our findings reveal that excited e-h pairs reduce both the critical displacement (or critical shear strain) and shear strength of nanotwinned B4C under shear-induced failure. This reduction stems from the redistribution of electrons and holes near the twin boundary, weakening the B-C bond connecting adjacent icosahedra and leading to cage destabilization and failure. Notably, e-h excitation alters the deformation mechanism of asymmetric twins while exacerbating that of symmetric twins. These simulation results offer a physical explanation for the observed softening effects in nanotwinned materials under e-h excitation, thereby contributing to the understanding of the photomechanical effect.
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