Electrically Dynamic Configurable WSe2 Transistor and the Applications in Photodetector
Tong Bu,Xinpei Duan,Chang Liu,Wanhan Su,Xitong Hong,Ruohao Hong,Xinjie Zhou,Yuan Liu,Zhiyong Fan,Xuming Zou,Lei Liao,Xingqiang Liu
DOI: https://doi.org/10.1002/adfm.202305490
IF: 19
2023-07-13
Advanced Functional Materials
Abstract:The fabricated multi‐gated WSe2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification ratio, as well as n‐ and p‐type inverter. Benefiting from the continuous band alignment induced modulation of channel underneath the dual gates, the devices exhibit high‐performance photodetection in wide spectral range and lead to fast response without persistent current. Non‐destructive and reversible modulations of polarity and carrier concentration in transistors are essential for complementary devices. The fabricated multi‐gated WSe2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification ratio of 4.1 × 105, as well as n‐ and p‐type inverter with voltage gain of 19.9 and 12.1, respectively. Benefiting from the continuous band alignment induced modulation of channel underneath the dual gates, the devices exhibit high‐performance photodetection in wide spectral range. The devices yield high photo‐responsivity (5.16 A W−1) and large Ilight/Idark ratio (1 × 105). Besides, the local gate fields accelerate the separation of photo‐induced carriers, leading to fast response without persistent current. This strategy takes the advantage of the simplified design and continues to deliver integrated circuits with high density. The superior electrical and photodetection characteristics exhibit great potency in the domain of future optoelectronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology