High Thermoelectric Performance in XAgSe2 (X = Sc, Y) from Strong Quartic Anharmonicity and Multi-Valley Band Structure

Xuhao Song,Yinchang Zhao,Jun Ni,Sheng Meng,Zhenhong Dai

DOI: https://doi.org/10.1039/d3ta03156j

IF: 11.9

2023-01-01

Journal of Materials Chemistry A

Abstract:The thermal transport and thermoelectric characteristics of the chalcogenide XAgSe2 (X = Sc, Y) are comprehensively investigated through first-principles calculations.

What problem does this paper attempt to address?

Enhanced Thermoelectric Performance of Quaternary Cu2-2xAg2xSe1-xSx Liquid-like Chalcogenides

Mengjia Guan,Kunpeng Zhao,Pengfei Qiu,Dudi Ren,Xun Shi,Lidong Chen

DOI: https://doi.org/10.1021/acsami.9b01643

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Liquid-like binary Cu2-δX (X = S, Se, and Te) chalcogenides and their ternary solid solutions have gained notable attention in thermoelectrics due to their interesting and abnormal thermal and electrical transport properties. However, previous studies mainly focus on a single element alloying at either an anion or cation site whereas the investigation on cation/anion co-alloying is very rare so far. Here, a series of quaternary Cu2-2 xAg2 xSe1- xS x ( x = 0.01, 0.03, 0.05, 0.1, 0.15) liquid-like copper chalcogenide materials have been fabricated and the effects of Ag/S co-alloying on the thermoelectric properties of Cu2Se have been systematically studied. It is found that all compounds are mixed phases at room temperature but single cubic phase at high temperatures. The introduction of Ag and S in Cu2Se brings about a large mass fluctuation rather than strain field fluctuation that effectively suppresses the lattice thermal conductivity. Furthermore, on increasing the Ag and S contents, the high electrical conductivity of pristine Cu2Se is well tuned to the optimal range derived from the single parabolic band model analysis. Consequently, a peak zT of 1.6 at 900 K is achieved in Cu1.8Ag0.2Se0.9S0.1, which is about 33% higher than that of binary Cu2Se.
High Thermoelectric Performance in Chalcopyrite Cu1- xAgxGaTe2-ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

Hongyao Xie,Yukun Liu,Yinying Zhang,Shiqiang Hao,Zhi Li,Matthew Cheng,Songting Cai,G Jeffrey Snyder,Christopher Wolverton,Ctirad Uher,Vinayak P Dravid,Mercouri G Kanatzidis

DOI: https://doi.org/10.1021/jacs.2c02726

2022-05-25

Abstract:The understanding of thermoelectric properties of ternary I-III-VI2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu1-xAgxGaTe2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu1-xAgxGaTe2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu1-xAgxGaTe2, which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu1-xAgxGaTe2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu1-xAgxGaTe2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu0.68Ag0.3GaTe2-0.5%ZnTe compound are achieved.
Superior thermoelectric properties of ternary chalcogenides CsAg5Q3 (Q = Te, Se) predicted using first-principles calculations

Un-Gi Jong,Chung-Jin Kang,Su-Yong Kim,Hyon-Chol Kim,Chol-Jun Yu

DOI: https://doi.org/10.1039/d1cp05796k

2022-03-02

Abstract:Tailoring novel thermoelectric materials (TEMs) with a high efficiency is challenging due to the difficulty in realizing both low thermal conductivity and high thermopower factor. In this work, we propose ternary chalcogenides CsAg5Q3 (Q = Te, Se) as promising TEMs based on first-principles calculations of their thermoelectric properties. Using lattice dynamics calculations within self-consistent phonon theory, we predict their ultralow lattice thermal conductivities below 0.27 W m-1 K-1, revealing the strong lattice anharmonicity and rattling vibrations of Ag atoms as the main origination. By using the mBJ exchange-correlation functional, we calculate the electronic structures with the direct band gaps in good agreement with experiments, and evaluate the charge carrier lifetime as a function of temperature within the deformation potential theory. Our calculations to solve Boltzmann transport equations demonstrate high thermopower factors of 2.5 mW m-1 K-2 upon p-type doping at 300 K, comparable to the conventional dichalcogenide thermoelectric GeTe. With these ultralow thermal conductivities and high thermopower factors, we determine a relatively high thermoelectric figure of merit ZT along the z-axis, finding the maximum value of ZTz to be 2.5 at 700 K for CsAg5Se3 by optimizing the hole concentration. Our computational results highlight the great potentiality of CsAg5Q3 (Q = Te, Se) for high-performance thermoelectric devices operating at room temperature.
Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

Qingyu Yang,Chen Ming,Pengfei Qiu,Zhengyang Zhou,Xianxiu Qiu,Zhiqiang Gao,Tingting Deng,Lidong Chen,Xun Shi

DOI: https://doi.org/10.1002/smll.202300699

IF: 13.3

2023-02-26

Small

Abstract:AgCuSe-based materials have attracted great attentions recently in thermoelectric (TE) field due to their extremely high electron mobility, ultralow lattice thermal conductivity, and abnormal "brittle-ductile" transition at room temperature. However, although the investigation on the crystal structure of AgCuSe low-temperature phase (named as β-AgCuSe) was started more than half a century before, it is still in controversy yet, which greatly limits the understanding of its intriguing electrical, thermal, and mechanical performance. In this work, via adopting the advanced three-dimensional electron diffraction technique, this study finds that the AgCuSe-based materials crystalize in an incommensurately modulated structure with an orthorhombic Pmmn(0β1/2)s00 superspace group. The local lattice distortion in the incommensurately modulated structure has weak effects on the conduction band minimum due to the delocalized and isotropic feature of Ag 5s states, leading to high carrier mobility. Likewise, the inhomogeneous, weak, and anisotropic Ag-Se bonds result in the high degree of anharmonicity and ultralow lattice thermal conductivity. Furthermore, alloying S in AgCuSe reinforces the interaction between the adjacent Ag-Se layers, yielding the "brittle-ductile" transition at room temperature. This work well interprets the structure-performance relationship of AgCuSe-based materials and sheds light on the future investigation of this class of promising TE materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe 3 by High-Entropy Engineering

Yubo Luo,Shiqiang Hao,Songting Cai,Tyler J. Slade,Zhong Zhen Luo,Vinayak P. Dravid,Chris Wolverton,Qingyu Yan,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/jacs.0c07803

IF: 15

2020-08-04

Journal of the American Chemical Society

Abstract:We investigate the structural and physical properties of the AgSnmSbSem+2 system with m = 1–20 (i.e., SnSe matrix and ∼5–50% AgSbSe2) from atomic, nano, and macro length scales. We find the 50:50 composition, with m = 1 (i.e., AgSnSbSe3), forms a stable cation-disordered cubic rock-salt p-type semiconductor with a special multi-peak electronic valence band structure. AgSnSbSe3 has an intrinsically low lattice thermal conductivity of ∼0.47 W m–1 K–1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on Se sites creates a quinary high-entropy NaCl-type solid solution AgSnSbSe3-xTex with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ∼0.32 W m–1 K–1 at 723 K and higher hole carrier concentration than AgSnSbSe3. Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe1.5Te1.5, the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ∼9.54 μW cm–1 K–2 (400–773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K, and a high average ZT of ∼1.0 over a wide temperature range of 400–773 K in AgSnSbSe1.5Te1.5.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.0c07803?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.0c07803</a>.Experimental and computational details; Figures S1–S13 and Tables S1 and S2 (<a class="ext-link" href="/doi/suppl/10.1021/jacs.0c07803/suppl_file/ja0c07803_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, multidisciplinary
High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Non-Equilibrium Synthesis.

Xing Tan,Jingxuan Ding,Huifang Luo,Olivier Delaire,Jiong Yang,Zhifang Zhou,Jin-Le Lan,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1021/acsami.0c10508

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:AgSbSe2 is a typical member of cubic I-V-VI2 semiconductors, which are known for their extremely low lattice thermal conductivity (κl). However, the low electrical conductivity of AgSbSe2, below ∼10 S cm-1 at room temperature, has hindered its thermoelectric performance. In this work, single-phase AgSbSe2 bulk samples with much higher electrical conductivity were synthesized via self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) for the first time. Pb doping through the nonequilibrium process further increases the electrical conductivity to >100 S cm-1. Furthermore, continuously increased effective mass md* can be achieved upon Pb doping because of the multiple degenerate valence bands of AgSbSe2 and the energy-filtering effect induced by in situ-formed nanodots. The simultaneous enhancement of both the electrical conductivity and Seebeck coefficient contributes to an unprecedentedly high average power factor of 6.75 μW cm-1 K-2. Meanwhile, the introduced dense grain boundaries and point defects enhance the phonon scattering and consequently suppress κl, yielding a high ZT value of 1.2 at 723 K in AgSb0.94Pb0.06Se2. This study opens a new avenue for rapid, low-cost, large-scale production of AgSbSe2-based materials and demonstrates that Pb-doped AgSbSe2 prepared via the SHS-SPS method is a promising candidate for thermoelectric applications.
Surface Chemistry and Band Engineering in AgSbSe 2 : Toward High Thermoelectric Performance

Yu Liu,Mingquan Li,Shanhong Wan,Khak Ho Lim,Yu Zhang,Mengyao Li,Junshan Li,Min Hong,Andreu Cabot,Maria Ibáñez

DOI: https://doi.org/10.1021/acsnano.3c03541

IF: 17.1

2023-06-14

ACS Nano

Abstract:AgSbSe(2) is a promising thermoelectric (TE) p-type material for applications in the middle-temperature range. AgSbSe(2) is characterized by relatively low thermal conductivities and high Seebeck coefficients, but its main limitation is moderate electrical conductivity. Herein, we detail an efficient and scalable hot-injection synthesis route to produce AgSbSe(2) nanocrystals (NCs). To increase the carrier concentration and improve the electrical conductivity, these NCs are doped with Sn^(2+) on...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
KAgX (X = S, Se): High-Performance Layered Thermoelectric Materials for Medium-Temperature Applications

Xue-Liang Zhu,Hengyu Yang,Wu-Xing Zhou,Baotian Wang,Ning Xu,Guofeng Xie

DOI: https://doi.org/10.1021/acsami.0c08843

2020-07-15

Abstract:Monolayer KAgX are a class of novel two-dimensional (2D) layered materials with efficient optical absorption and superior carrier mobility, signifying their potential application prospect in photovoltaic (PV) and thermoelectric (TE) fields. Motivated by the recent theoretical studies on the KAgX monolayer, we carried out systematic investigations on the TE performance of KAgS and KAgSe monolayers, employing density functional theory (DFT) and semiclassical Boltzmann transport equation (BTE). For both KAgSe and KAgS monolayers, large Grüneisen parameters, low group velocities, and short phonon scattering time greatly hinder their heat transport and result in an ultralow thermal conductivity, 0.26 and 0.33 W m–1 K–1 at 300 K, respectively. A twofold degeneracy appearing at the Γ point and the abrupt slope of the density of states (DOS) near the Fermi level give rise to high Seebeck coefficients of KAgX monolayers. Due to the ultralow thermal conductivity and excellent electronic transport performance, the ZT values as high as 4.65 (3.11) and 4.05 (2.63) at 500 (300) K in the n-type doping for KAgSe and KAgS monolayers are obtained. The exceptional performance of KAgX monolayers sheds light on their immense potential applications in the medium-temperature (around 300–500 K) thermoelectric devices and greatly stimulates further experimental synthesis and validation.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08843?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08843</a>.The band structure of the KAgX bulk phase; real-space distribution of local density of states; and the phonon vibrational modes (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08843/suppl_file/am0c08843_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
High Thermoelectric Performance of a Novel Γ-Pbsnx2 (X = S, Se, Te) Monolayer: Predicted Using First Principles

Changhao Ding,Zhifu Duan,Nannan Luo,Jiang Zeng,Wei Ren,Liming Tang,Keqiu Chen

DOI: https://doi.org/10.3390/nano13091519

IF: 5.3

2023-01-01

Nanomaterials

Abstract:Two-dimensional (2D) group IV metal chalcogenides are potential candidates for thermoelectric (TE) applications due to their unique structural properties. In this paper, we predicted a 2D monolayer group IV metal chalcogenide semiconductor γ-PbSn2 (X = S, Se, Te), and first-principles calculations and Boltzmann transport theory were used to study the thermoelectric performance. We found that γ-PbSnX2 had an ultra-high carrier mobility of up to 4.04 × 103 cm2 V−1 s−1, which produced metal-like electrical conductivity. Moreover, γ-PbSn2 not only has a very high Seebeck coefficient, which leads to a high power factor, but also shows an intrinsically low lattice thermal conductivity of 6–8 W/mK at room temperature. The lower lattice thermal conductivity and high power factors resulted in excellent thermoelectric performance. The ZT values of γ-PbSnS2 and γ-PbSnSe2 were as high as 2.65 and 2.96 at 900 K, respectively. The result suggests that the γ-PbSnX2 monolayer is a better candidates for excellent thermoelectric performance.
Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers

Qing-Yu Xie,Jiang-Jiang Ma,Qing-Yi Liu,Peng-Fei Liu,Pei Zhang,Kai-Wang Zhang,Bao-Tian Wang

DOI: https://doi.org/10.1039/d1cp05708a

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:A surprise TE figure of merit ( ZT ) of 3.26 along the y -direction for n-type doping for a CuSe monolayer.

chemistry, physical,physics, atomic, molecular & chemical
High thermoelectric performance of superionic argyrodite compound Ag8SnSe6

Lin Li,Yuan Liu,Jiyan Dai,Aijun Hong,Min Zeng,Zhibo Yan,Jun Xu,Dong Zhang,Dan Shan,Shilei Liu,Zhifeng Ren,Jun-Ming Liu

DOI: https://doi.org/10.1039/c6tc00810k

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:A good thermoelectric material usually has a high power factor and low thermal conductivity for high figure of merit (ZT), and is also environmentally friendly and economical. Superionic compounds are heavily studied because of their ultra-low thermal conductivity even though the thermal stability remains an issue. In this work, we report a superionic argyrodite compound Ag8SnSe6 as a promising mid-temperature thermoelectric material because of its high ZT and good thermal stability up to 550 degrees C. It is revealed that Ag8SnSe6 exhibits a decent Seebeck coefficient (n-type) and electrical conductivity. At the same time, its thermal conductivity is lower than the glass limit with the thermal capacity CV below 3Nk(B) at high temperature, where N is the Avogadro's number and k(B) the Boltzmann constant. Detailed microstructural and thermodynamic characterization of this compound is performed to understand the electronic and phononic origins of the thermoelectric properties. The highly random ionic occupations in the cubic phase, leading to the molten silver sublattice and phononic mode softening, are responsible for the very low thermal conductivity and ZT similar to 1.1 at 450 degrees C.
Structural transformation and thermoelectric performance in Ag2Te1−Se solid solution

Ting Zhu,Xianli Su,Qingjie Zhang,Xinfeng Tang

DOI: https://doi.org/10.1016/j.jallcom.2021.159507

IF: 6.2

2021-08-01

Journal of Alloys and Compounds

Abstract:Both β-Ag2Te and β-Ag2Se are narrow band-gap Ag-based chalcogenide but with very different transport properties. Herein, the phase structure and thermoelectric properties of Ag2Te1-x Se x (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0) samples were systematically investigated. β-Ag2Te and β-Ag2Se can form a complete solid solution. The Ag2Te1-x Se x solid solutions are divided into two crystal structure regions, of which the Ag2Te1-x Se x (x = 0, 0.2) samples are the monoclinic phase and the Ag2Te1-x Se x (x = 0.4, 0.6, 0.8, 1.0) samples are the orthorhombic phase. Ag2Se alloying in Ag2Te obviously increases the carrier concentration in each phase region, resulting in a better electrical property in the orthorhombic phase region. Besides, alloying Ag2Se in Ag2Te softens the chemical bonding, leading to a much larger Grüneisen parameter in orthorhombic phase. In conjunction with the intensified alloy phonon scattering, Ag2Te0.6Se0.4 obtains the lowest thermal conductivity of 0.59 Wm−1 K−1 at 300 K. As a consequence, the ZT value (400 K) and the average figure of merit ZT avg a value (300–400 K) for orthorhombic phase Ag2Te0.2Se0.8 is 0.7 and 0.55 respectively, which are increased by 130% and 77% compared with the monoclinic Ag2Te0.8Se0.2 sample. This work demonstrates that Ag2Te1-x Se x compounds with orthorhombic structure shows greater potential as a high-performance thermoelectric material than that with the monoclinic structure.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Ultralow Lattice Thermal Conductivity and Superior Thermoelectric Performance in AgAlS2 and AgAlSe2

Muhammad Faizan,Shaojie Li,Zhongwei Liu,Zewei Li,Jiahao Xie,Kun Zhou,Yuhao Fu,Lijun Zhang

DOI: https://doi.org/10.1039/d4tc04075a

IF: 6.4

2024-12-09

Journal of Materials Chemistry C

Abstract:The search for thermoelectric materials with efficient energy conversion capabilities is crucial for addressing energy crises and environmental issues. In this work, we explore two Ag-based chalcopyrites, AgAlS2 and AgAlSe2, as potential thermoelectrics with outstanding performance using first-principles calculations and Boltzmann Transport theory. We compute formation energies and phonon spectra to verify their thermodynamic and dynamical stabilities. In addition, we perform ab-initio molecular dynamics simulations to confirm their thermal stability at high temperatures. Using the PBE and HSE06 methodologies, these materials are classified as medium-wide indirect band gap semiconductors. Remarkably, at 700 K, AgAlS2 and AgAlSe2 show low lattice thermal conductivities (κL) of 0.53 and 0.37 W/mK, respectively, in the z directions. The ultralow κL observed in the AgAlSe2 compound is attributed to the strong phonon anharmonicity and increased scattering rates resulting from the simultaneous presence of antibonding-induced anharmonic rattling of Ag atoms and low frequency optical phonon modes. Furthermore, at optimal carrier doping, the flat and heavy degenerate valence band edges result in high thermopower, while the light bands at conduction band minimum lead to high electrical conductivity (σ) and electronic thermal conductivity (ke). Upon combining the high power factor and low κL, the predicted figure of merit (ZT) can reach up to 1.55 (2.18) for p-type AgAlS(Se)2 at 700 K, suggesting that Ag-based chalcopyrites are promising thermoelectrics at medium temperature.

materials science, multidisciplinary,physics, applied
Structure and thermoelectric performance of AgyIn3.33-y/3Se5 compounds

訾鹏,白辉,汪聪,武煜天,任培安,陶奇睿,吴劲松,苏贤礼,唐新峰

DOI: https://doi.org/10.7498/aps.71.20220179

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:In this study, we found new AgyIn3.33-y/3Se5 compounds in Ag-In-Se system by static diffusion method combined with common X-ray diffraction and backscattering electron analysis. The crystal structure belongs to the trilateral system with the P3m1 space group, which features with a two-dimensional layered structure. The unit cell is composed of 9-atom quantum layers arranged in the sequence of Se1-In1-Se2-In2-Se3-Ag/In3-Se4-In4-Se5, and in-between these layers are combined by the weak van der Waals force. The sintered bulk samples show highly anisotropic transport properties and have ultralow lattice thermal conductivity along the direction parallel to sintering pressure about 0.15 W m-1 K-1 at 873 K. The intrinsically ultralow lattice thermal conductivity mainly comes from low phonon velocity and the strong coupling between low frequency optical phonon and acoustic phonons. AgxIn3.33-x/3Se5 compounds behave as an n-type conduction. The electrical conductivity is 4×104 S m-1 and the Seebeck coefficient is - 80 μV K-1 at room temperature. Therefore, AgxIn3.33-x/3Se5 compounds show high electrical transport properties in a wide temperature range, and the power factor is around 5 μW cm-1 K-2 in the range of 450-800 K. Due to the ultra-low lattice thermal conductivity along the direction parallel to sintering pressure, Ag0.407In3.198Se5 reached a maximum ZT of 1.01 at 873 K and an average ZT of 0.45 at 300 K-850 K. The discovery of AgyIn3.33-y/3Se5 expands the n-type Copper based Chalcogenide and lays an important foundation for the application of Copper based Chalcogenide.

physics, multidisciplinary
Long-range Ordering and Local Structural Disordering of BiAgSe2 and BiAgSeTe Thermoelectrics

Weifeng Huang,Yingcai Zhu,Yong Liu,Shi Tao,Changchun Yang,Qianshun Diao,Zhen Hong,Haijiao Han,Lijuan Liu,Wei Xu

DOI: https://doi.org/10.1039/d1cp03676a

2021-01-01

Abstract:Thermoelectric materials are promising for energy harvesting using waste heat. The thermal management of the thermoelectric materials attract scientific and technological interests. The narrow bandgap semiconductor BiAgSe2 is a good candidate for thermoelectric materials due to its ultralow thermal conductivity. The mother compound BiAgSe2 crystallizes in hexagonal symmetry at room temperature, but experiences structural transitions to cubic phase at high temperature. By contrast, the daughter compound BiAgSeTe exhibits long range ordering and crystallizes into cubic phase at room temperature. Nevertheless, the local structural disorderings due to the Bi3+ and Ag+ anti-site defects, as well as local structural distortions, are ubiquitous in both parent BiAgSe2 and BiAgSeTe. BiAgSeTe exhibits distinct transport properties owing to the disordering-induced drastic changes in the electronic band structure, as well as the scattering dictated by the point defects. It is suggested that BiAgSe2 and BiAgSeTe could be good candidates for phonon glass and crystal glass (PGEC)-type thermoelectrics.
High Thermoelectric Properties for Sn-doped AgSbSe 2

D. Li,X. Y. Qin,T. H. Zou,J. Zhang,B. J. Ren,C. J. Song,Y. F. Liu,L. Wang,H. X. Xin,J. C. Li

DOI: https://doi.org/10.1016/j.jallcom.2014.11.081

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Thermoelectric properties of lightly Sn-doped compounds AgSb1-xSnxSe2 (x = 0, 0.005, 0.010, 0.02 and 0.025) (at 300-673 K) were investigated. The results indicate the optimized enhanced power factor and low thermal conductivity result in a high thermoelectric figure of merit, ZT, of 1.21 and 1.15 at 660 K in 1 mol% and 2 mol% Sn doped AgSbSe2, which are 363% and 349% as large as that of the pristine sample, respectively. The peak ZT of 1.21 for AgSb0.99Sn0.01Se2 is the highest value obtained for AgSbSe2-based materials. This suggests that the slight Sn doping is an effective approach to improve ZT of AgSbSe2. (C) 2014 Published by Elsevier B.V.
Enhanced Thermoelectric Performance in n-type Ag2Se Near Room Temperatures

Raju Kumar Biswas,Swapan K. Pati

DOI: https://doi.org/10.1039/d3cp05833f

IF: 3.3

2024-02-15

Physical Chemistry Chemical Physics

Abstract:Although there are an enormous number of high-temperature thermoelectric materials already present, designing a near-room-temperature especially n-type thermoelectric material with a high thermoelectric figure of merit is extremely challenging. Generally, pristine Ag2Se reveals unusually low thermal conductivity along with high electrical conductivity and Seebeck coefficient, which leads to high thermoelectric performance (n-type) at room temperature. Herein, we report a pseudo-ternary phase (Ag2Se0.5Te0.25S0.25) that exhibits significantly high thermoelectric performance (zT ~ 2.1) even at 400 K. First-principles calculation reveals that the Rashba type of spin-dependent band spitting which originates due to Tellurium substitution helps to enhance carrier mobility. We also show that the intrinsic carrier mobility is not only controlled by carrier effective mass, rather it is substantially limited by both the longitudinal acoustic and optical phonon modes, which is an extension of the deformation potential theory. Locally off-centered sulfur atoms, together with the increase in configurational entropy via substitution of Te and S atoms in Ag2Se, lead to a drastic reduction in lattice thermal

chemistry, physical,physics, atomic, molecular & chemical
Tl 2 XY (X, Y = S, Se) monolayers with low lattice thermal conductivity and high thermoelectric performance by full-band approach with four scattering mechanisms

Meng-Yuan Yu,Chuan-Lu Yang,Xiaohu Li,Yuliang Liu,Wenkai Zhao

DOI: https://doi.org/10.1088/1361-6463/ad8ce8

2024-11-01

Journal of Physics D Applied Physics

Abstract:The low lattice thermal conductivity and high thermoelectric performance of the Janus Tl2SSe monolayer in the temperature region of 300~700 K are identified based on the thermoelectric properties of the Tl2S2, Tl2SSe, and Tl2Se2 monolayers. The transport coefficients for carrier concentrations and temperatures are obtained by solving the linearized Boltzmann transport equation in a full-band electronic structure. Four scattering mechanisms of acoustic deformation potential, optical deformation potential, polar optical phonon, and ionized impurity scatterings are considered. The ionized impurity scattering is recognized as the most important. The lattice thermal conductivity of the Janus Tl2SSe monolayer is substantially smaller than those of the Tl2SSe, Tl2Se2 monolayers with higher symmetry. Moreover, we find that the Janus structures of the Tl2SSe monolayer increase the dielectronic constants and enhance the polar optical phonon scattering, then reduce the power factor to some extent. Therefore, the lattice thermal conductivity actually couples with the transport coefficient and cannot be individually regulated as is usually assumed. However, the ZT value of the Tl2SSe monolayer can still reach 1.77 at 700 K even if the intrinsic concentration and the bipolar effect are included. Therefore, the Tl2SSe monolayer is expected to be a promising candidate for thermoelectric materials.

physics, applied
High Thermoelectric Performance of New Rhombohedral Phase of GeSe Stabilized Through Alloying with AgSbSe2

Zhiwei Huang,Samuel A. Miller,Binghui Ge,Mingtao Yan,Shashwat Anand,Tianmin Wu,Pengfei Nan,Yuanhu Zhu,Wei Zhuang,G. Jeffrey Snyder,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1002/anie.201708134

2017-01-01

Angewandte Chemie

Abstract:AbstractGeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe. Orthorhombic GeSe has been predicted theoretically to have good thermoelectric performance but is difficult to dope experimentally. Like PbTe, rhombohedral GeTe has a multivalley band structure, which is ideal for thermoelectrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical transport. Herein, we investigate the thermoelectric properties of GeSe alloyed with AgSbSe2, which stabilizes a new rhombohedral structure with higher symmetry that leads to a multivalley Fermi surface and a dramatic increase in carrier concentration. The zT of GeAg0.2Sb0.2Se1.4 reaches 0.86 at 710 K, which is 18 times higher than that of pristine GeSe and over four times higher than doped orthorhombic GeSe. Our results open a new avenue towards developing novel thermoelectric materials through crystal phase engineering using a strategy of entropy stabilization of high‐symmetry alloys.
Microscopic mechanism of low lattice thermal conductivity in natural superlattice materials BaXYF (X = Cu, Ag; Y = Se, Te) including fully quartic anharmonicity

Tongcai Yue,Yinchang Zhao,Jun Ni,Sheng Meng,Zhenhong Dai

DOI: https://doi.org/10.1103/physrevb.107.024301

IF: 3.7

2023-01-01

Physical Review B

Abstract:Layered quaternary fluorochalcogenides with natural superlattice structures have received particular attention in the thermoelectric (TE) field due to their favorable electronic properties. However, further exploration of these materials in the TE field is hindered by the lack of studies on the lattice thermal transport properties. Here, we investigate the microscopic mechanism of lattice thermal transport in natural superlattice materials BaXYF (X = Cu, Ag; Y = Se, Te) using first-principles calculations combined with self-consistent phonon theory, compressive sensing techniques, and Boltzmann transport equations. We consider three-and four-phonon scattering as well as temperature-driven phonon energy shifts due to quartic anharmonicity. We find that the strong quartic anharmonicity plays a crucial role in the lattice stability of BaCuSeF and BaCuTeF. Furthermore, the kappa L of the four materials exhibits significant anisotropy due to different bonding types along the a(b) and c axes. The calculations indicate that the four materials have low lattice thermal conductivities kappa L, e.g., 0.85-1.61 Wm-1K-1 at 300 K. Additionally, the results exhibit that a reasonable kappa L and corresponding temperature dependence can be obtained by considering the fully quartic anharmonicity. Our findings not only fill the gap in the lattice thermal transport research of natural superlattice materials, but also deepen a comprehensive understanding of the low kappa L of natural superlattice materials.

High Thermoelectric Performance in XAgSe2 (X = Sc, Y) from Strong Quartic Anharmonicity and Multi-Valley Band Structure

Enhanced Thermoelectric Performance of Quaternary Cu2-2xAg2xSe1-xSx Liquid-like Chalcogenides

High Thermoelectric Performance in Chalcopyrite Cu1- xAgxGaTe2-ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

Superior thermoelectric properties of ternary chalcogenides CsAg5Q3 (Q = Te, Se) predicted using first-principles calculations

Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe 3 by High-Entropy Engineering

High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Non-Equilibrium Synthesis.

Surface Chemistry and Band Engineering in AgSbSe 2 : Toward High Thermoelectric Performance

KAgX (X = S, Se): High-Performance Layered Thermoelectric Materials for Medium-Temperature Applications

High Thermoelectric Performance of a Novel Γ-Pbsnx2 (X = S, Se, Te) Monolayer: Predicted Using First Principles

Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers

High thermoelectric performance of superionic argyrodite compound Ag8SnSe6

Structural transformation and thermoelectric performance in Ag2Te1−Se solid solution

Ultralow Lattice Thermal Conductivity and Superior Thermoelectric Performance in AgAlS2 and AgAlSe2

Structure and thermoelectric performance of AgyIn3.33-y/3Se5 compounds

Long-range Ordering and Local Structural Disordering of BiAgSe2 and BiAgSeTe Thermoelectrics

High Thermoelectric Properties for Sn-doped AgSbSe 2

Enhanced Thermoelectric Performance in n-type Ag2Se Near Room Temperatures

Tl 2 XY (X, Y = S, Se) monolayers with low lattice thermal conductivity and high thermoelectric performance by full-band approach with four scattering mechanisms

High Thermoelectric Performance of New Rhombohedral Phase of GeSe Stabilized Through Alloying with AgSbSe2

Microscopic mechanism of low lattice thermal conductivity in natural superlattice materials BaXYF (X = Cu, Ag; Y = Se, Te) including fully quartic anharmonicity