Analysis and Fabrication of an LDMOS With

Junhong Li,Ping Li,Weirong Huo,Guo‐Jun Zhang,Yahong Zhai,Xingbi Chen

2011-01-01

Abstract:A lateral double-diffusion MOSFET with a uniform high-permittivity (HK) dielectric field plate (FP) is manufactured and presented in this letter. The HK dielectric FP is capable of cutting both electric peak fields at the channel p-n junction and the edge of FP, providing higher breakdown voltage (BV) based on a novel mechanism. The Pb(Zr0.53, Ti0.47)O3 (PZT) is taken as the HK dielectric material for its large preanneal permittivity. The test results indicate that, based on two identical devices except for the dielectric material, the BV of the one with PZT FP is more than three times of that of the counterpart with a SiO2 dielectric, approximately 350 and 100 V, respectively. Index Terms—Field plate (FP), high permittivity (HK), lateral double-diffusion MOSFET (LDMOS), potential distribution.