Abstract:Ultra-wide band gap gallium oxide (Ga2O3) semiconductor has important research value and broad potential applications in power and radio frequency (RF) electronic devices, due to its large bandgap, high critical breakdown field strength, and large size single crystal substrate. Although great progress has been obtained in its materials and devices, such as the commercial 2-inch and 4-inch single crystal and epitaxial substrates, the extremely low thermal conductivity and the lack of effective p-type doping techniques are the crucial bottlenecks limiting the complex device structures and improved performance. The recent progress of heterogeneous Ga2O3 transistors on high thermal conductivity substrates and superjunction transistors based on p-NiO/ n-Ga2O3 heterojunctions are reviewed. The thermal limitation of Ga2O3 electronics can be effectively overcome by the heterogeneous integration of beta-Ga2O3 electronics onto the high. substrates, such as Si, SiC, and so on. Transient thermoreflectance measurements present an effectively improved thermal boundary resistance of the fabricated beta-Ga2O3/SiC heterostructure by the ion-cutting process compared with that of the beta-Ga2O3 bulk wafer. Heterogeneous Ga2O3 transistors on SiC and Si substrates exhibited superior temperature-dependent performance to the devices on the Ga2O3 bulk substrate. As the ambient temperature increases from 25 to 250 degrees C, heterogeneous beta-Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) on Si substrates have a more stable ION as compared to the devices on a semi-insulating beta-Ga2O3 substrate and IOFF of the devices increases by one order of magnitude in the same ambient temperature range due to the eliminated substrate leakage, which is superior to the bulk devices (5-6 orders of magnitude). Heterogeneous beta-Ga2O3 MOSFETs on SiC substrates exhibit a more satisfactory onresistance with an elevated temperature than that of the Ga2O3 Schottky barrier diodes and MOSFETs on the bulk wafers. The recessed-gate Ga2O3-on-SiC MOSFETs demonstrate a stable power figure of merit of 100 MW/cm(2) up to 200 degrees C with a nearly kV-class breakdown voltage. The heterogeneous epitaxial p-NiO film on Ga2O3 substrates is developed to solve the lack of p-type doping techniques of Ga2O3. p-NiO/n-Ga2O3 heterojunctions show high quality and famous performance of p-n junctions through the fabricated heterojunction diodes, which provide a feasible way for the development of Ga2O3 bipolar devices. Superjunction transistors based on p-NiO/n- Ga2O3 heterojunctions present decent electrical characteristics, demonstrating a breakdown voltage and power figure-of merit of 2.42 and 4.86 times higher, respectively, than those of the control devices. Heterogeneous integration and heterojunction techniques of Ga2O3 can effectively overcome the two crucial bottlenecks to realize high-efficiency, high-power, commercially scalable Ga2O3 microelectronic devices and promote its practical process.

Heterogeneous Integration Technology for the Thermal Management of Ga2O3 Power Devices

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

Gallium Oxide (ga2o3) Heterogeneous and Heterojunction Power Devices

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Ga 2 O 3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Progress of gallium oxide heterogeneous and heterojunction power transistors

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Thermal Transport Properties of β-Ga 2 O 3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

Thermodynamics of Ion-Cutting of β-Ga 2 O 3 and Wafer-Scale Heterogeneous Integration of a β-Ga 2 O 3 Thin Film onto a Highly Thermal Conductive SiC Substrate

Strategy to Solve the Thermal Issue of Ultra-wide Bandgap Semiconductor Gallium Oxide Field Effect Transistor

Interface Thermal Conductance Between Β-Ga2o3 and Different Substrates

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Thermal conductance across β-Ga 2 O 3 -diamond van der Waals heterogeneous interfaces

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Investigation of the Interface Electronic Characteristics of Β-Ga2o3 (100)/4H-Sic (0001)

Extremely Low Thermal Resistance of β-Ga 2 O 3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging

Influence of Substrate and Gate Insulator on the Thermal Characteristics of Β-Ga2o3 Field-Effect Transistors: A Simulation Study